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Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
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| Part No. |
CY7C1525V18-200BZC CY7C1525V18-250BZC CY7C1514V18
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| OCR Text |
...c1525v18 ? 8m x 9 cy7c1512v18 ? 4m x 18 cy7c1514v18 ? 2m x 36 functional description the cy7c1510v18, cy7c1525 v18, cy7c1512v18, and cy7c15...byte write select 0, 1, 2 and 3 ? active low . sampled on the rising edge of the k and k clocks ... |
| Description |
72-Mbit QDR-IISRAM 2-Word Burst Architecture 8M X 9 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR-IISRAM 2-Word Burst Architecture 72兆位QDR - II型⑩SRAM2字突发结
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| File Size |
353.66K /
24 Page |
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ELAN Microelctronics Corp .
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| Part No. |
EM23C3220
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| OCR Text |
4m x 8/2m x 16 cmos rom 10.22.1997 preliminary preliminary preliminary preliminary preliminary em23c3220 series 4m x 8/2m x 16 cmos rom gene...byte mode) or as 2m x 16 bit (word mode) depending on byte (pin 33/44sop) voltage level. em23c3220 h... |
| Description |
5V Only 32M-BitM×8/2M×16Read Only Memory(5V单电2M位CMOS ROM)
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| File Size |
44.47K /
5 Page |
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Macronix International Co., Ltd.
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| Part No. |
23C4100-10 23C4100-12 23C4100-15
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| OCR Text |
...ion the mx23c4100 is a 5v only, 4m-bit, read only memory. it is organized as 512kx8 bits (byte mode) or as 256kx16 bit (word mode) depending on byte (pin 31) voltage level. mx23c4100 has a static standby mode, and has an access time of 10... |
| Description |
4M-BIT [512K x 8/256K x 16] MASK ROM
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| File Size |
319.25K /
8 Page |
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Cypress Semiconductor Corp.
SRAM
Cypress Semiconductor, Corp.
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| Part No. |
CY7C1470V25 CY7C1470V25-167ACES CY7C1470V25-167AXC CY7C1470V25-167AXCES CY7C1470V25-167BZC CY7C1470V25-167BZCES CY7C1470V25-167BZXC CY7C1470V25-200ACES CY7C1470V25-200AXC CY7C1470V25-200AXCES CY7C1470V25-200BZC CY7C1470V25-200BZCES CY7C1470V25-200BZXC CY7C1470V25-250AXC CY7C1470V25-250BZC CY7C1470V25-250BZXC CY7C1472V25-250AXC CY7C1472V25-250BZXC CY7C1474V25-250BGXC CY7C1472V25-250BZC CY7C1474V25-250BGC CY7C1474V25-167BGCES CY7C1472V25-167BZCES CY7C1472V25-200ACES CY7C1472V25-200AXCES CY7C1472V25-200BZCES CY7C1472V25-167AXCES CY7C1474V25-200BGXC CY7C1474V25-200BGCES CY7C1472V25 CY7C1472V25-167AXC CY7C1472V25-167BZXC CY7C1472V25-200BZXC CY7C1474V25-200BGC
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| OCR Text |
4M x 18/1M x 72) Pipelined SRAM with NoBLTM Architecture
Features
* Pin-compatible and functionally equivalent to ZBTTM * Supports 250-MHz...Byte Write capability * Single 2.5V power supply * 2.5V/1.8V I/O operation * Fast clock-to-output ti... |
| Description |
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL?/a> Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3.4 ns, PQFP100
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBLArchitecture 1M X 72 ZBT SRAM, 3 ns, PBGA209
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
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| File Size |
382.31K /
27 Page |
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it Online |
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