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  4a 500v Datasheet PDF File

For 4a 500v Found Datasheets File :: 768    Search Time::1.344ms    
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    BUL312FP

Inchange Semiconductor Company Limited
Part No. BUL312FP
OCR Text ...ation voltage i c = 2a; i b = 0.4a b 0.7 v v ce (sat)-3 collector-emitter saturation voltage i c = 3a; i b = 0.6a b 1.1 v v ...500v; i b = 0 0.25 ma h fe-1 dc current gain i c = 10ma; v ce = 5v 8 h fe-2 dc curren...
Description isc Silicon NPN Power Transistor

File Size 74.48K  /  2 Page

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    Sanyo
Part No. 2SC3750
OCR Text ...d ton VCC=200V, 5IB1=-2.5IB2=IC=4a, RL=50 tstg tf VCC=200V, 5IB1=-2.5IB2=IC=4a, RL=50 VCC=200V, 5IB1=-2.5IB2=IC=4a, RL=50 Switching Time Test Circuit No.1969-2/4 2SC3750 No.1969-3/4 2SC3750 Specifications of any and all SA...
Description NPN Triple Diffused Planar Silicon Transistor

File Size 99.56K  /  4 Page

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    Sanyo
Part No. 2SC4222
OCR Text ..., L=1mH, clamped ton tstg tf IC=4a, IB1=0.8A, IB2=-1.6A, RL=50, IC=4a, IB1=0.8A, IB2=-1.6A, RL=50, IC=4a, IB1=0.8A, IB2=-1.6A, RL=50, VCC=200V VCC=200V VCC=200V Switching Time Test Circuit No.2761-2/4 2SC4222 No.2761-3/4 2SC4...
Description NPN Triple Diffused Planar Silicon Transistor

File Size 94.13K  /  4 Page

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    HITACHI[Hitachi Semiconductor]
Part No. 2SK3234
OCR Text ...s typ (at VGS=10V, VDD=250V, ID=4a) (Qg) Qg=25nC typ (VDD=400V, VGS=10V, ID=8A) TO-220CFM D G 12 3 1. 2. 3. S 2SK323...500v, VGS = 0 VGS = 30V, VDS = 0 VDS = 10V, ID = 1mA ID = 4a, VDS = 10V 4 ID = 4a, VGS= 10V 4 VDS = ...
Description 2SK3234

File Size 131.00K  /  9 Page

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    2SK3520-01MR

Fuji Electric
Part No. 2SK3520-01MR
OCR Text ...S=400V VGS=0V VGS=30V VDS=0V ID=4a VGS=10V ID=4a VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=4a VGS=10V RGS=10 VCC=250V ID=8A VGS=10V L=4.98mH Tch=25C IF=8A VGS=0V Tch=25C IF=8A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C Min. 500 3.0 ...
Description    N CHANNEL SILICON POWER MOSFET

File Size 103.08K  /  2 Page

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    FJP2160D

Fairchild Semiconductor
Part No. FJP2160D
OCR Text ...c current gain v ce =3v, i c =0.4a 20 29 35 v ce =10v, i c =5ma 20 43 v ce (sat) collector-emitter saturation voltage i c =0.25a, i b =0.05a...500v, t p = 3.1 s, i c =0.3a, i b =0.03a, l c =1mh, srf=480khz 137 ns t s inductive storage time ...
Description ESBCRated NPN Silicon Transistor
ESBCTM Rated NPN Silicon Transistor

File Size 702.90K  /  12 Page

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    FQA28N50F FQA28N50

FAIRCHILD[Fairchild Semiconductor]
Part No. FQA28N50F FQA28N50
OCR Text ...M Features * * * * * * * 28.4a, 500v, RDS(on) = 0.16 @VGS = 10 V Low gate charge ( typical 110 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability Fast recovery body diode ( max, 250ns ) D ! ...
Description 500v N-Channel MOSFET

File Size 645.99K  /  8 Page

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    IRHNJ7430SE

International Rectifier
Part No. IRHNJ7430SE
OCR Text ... TM (R) ID QPL Part Number 4.4a JANSR2N7466U3 International Rectifier's RADHardTM HEXFET(R) MOSFET technology provides high performanc...500v, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. 12 vol...
Description 500v 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-0.5 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

File Size 119.21K  /  8 Page

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For 4a 500v Found Datasheets File :: 768    Search Time::1.344ms    
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