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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQA16N25C
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| OCR Text |
...A VDS = 40 V, ID = 8.9 A
(Note 4)
2.0 ---
-0.22 10.5
4.0 0.27 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacita...7mH, IAS = 15.6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 17.8A, di/dt 300A/s, VDD BVDSS, S... |
| Description |
250V N-Channel Advance Q-FET C-Series
250V N-Channel MOSFET
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| File Size |
866.39K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQAF16N25C
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| OCR Text |
...
(Note 1)
FQAF16N25C 250 11.4 7.2 45.6 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/C C C
Gate-Source...7mH, IAS = 15.6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 11.4A, di/dt 300A/s, VDD BVDSS, S... |
| Description |
250V N-Channel Advance Q-FET C-Series
250V N-Channel MOSFET
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| File Size |
854.42K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQB6N40CFTM FQB6N40CF
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| OCR Text |
...ase for 5 seconds
270 6 11.3 4.5 113 0.9 -55 to +150 300
Thermal Characteristics
Symbol
RJC RJA RJA
Parameter
Thermal Resistance...7mH, IAS = 6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 6A, di/dt 200A/s, VDD BVDSS, Startin... |
| Description |
400V N-Channel MOSFET
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| File Size |
964.99K /
8 Page |
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Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQI10N20L FQB10N20L FQB10N20LTM
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| OCR Text |
...A VDS = 30 V, ID = 5.0 A
(Note 4)
1.0 ---
-0.29 0.3 10.7
2.0 0.36 0.38 --
V S
Dynamic Characteristics
Ciss Coss Crss Input...7mH, IAS = 10A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 10A, di/dt 300A/s, VDD BVDSS, Start... |
| Description |
200V LOGIC N-Channel MOSFET
200V N-Channel Logic Level QFET
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| File Size |
572.73K /
9 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQP6N40CF
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| OCR Text |
... case for 5 seconds
270 6 73 4.5 73 0.58 -55 to +150 300
* Drain current limited by maximum junction temperature
Thermal Characteri...7mH, IAS = 6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 6A, di/dt 200A/s, VDD BVDSS, Startin... |
| Description |
400V N-Channel MOSFET
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| File Size |
1,059.67K /
8 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQPF6N40CF FQP6N40CF FQP6N40CF_06 FQP6N40CF06
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| OCR Text |
...F
400 6* 3.6* 24* 30 270 6 73 4.5
Units
V A A A V mJ A mJ V/ns
73 0.58 -55 to +150 300
38 0.3
W W/C C C
* Drain current li...7mH, IAS = 6A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 6A, di/dt 200A/s, VDD BVDSS, Startin... |
| Description |
400V N-Channel MOSFET
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| File Size |
1,062.53K /
10 Page |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
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| Part No. |
HGTP3N60A4 HGTD3N60A4 HGTD3N60A4S HGTP3N60A4NL
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| OCR Text |
...E OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,79...7mH IC = 3A, VCE = 300V IC = 3A, VCE = 300V
Current Turn-On Delay Time Current Rise Time Current ... |
| Description |
600V, NPT Series N-Channel IGBT
600V/ SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT
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| File Size |
139.94K /
8 Page |
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Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
HGTP3N60A4 HGT1S3N60A4S HGTD3N60A4S
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| OCR Text |
...E OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,79...7mH IC = 3A, VCE = 300V IC = 3A, VCE = 300V
Current Turn-On Delay Time Current Rise Time Current ... |
| Description |
600V, SMPS Series N-Channel IGBT 17 A, 600 V, N-CHANNEL IGBT, TO-263AB
600V/ SMPS Series N-Channel IGBT
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| File Size |
155.07K /
10 Page |
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IRF[International Rectifier]
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| Part No. |
IRF7E3704 IRF7E3704-15
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| OCR Text |
....0mA VGS = 10V, ID = 10A VGS = 4.5V, ID = 10A VDS = VGS, ID = 250A VDS = 10V, IDS = 10A VDS = 20V ,VGS=0V VDS = 16V, VGS = 0V, TJ = 125C V...7mH Peak IAS = 12A, VGS =10V, RG = 25
ISD 12A, di/dt 100A/s,
VDD 20V, TJ 150C
Pulse wid... |
| Description |
Avalanche Energy Ratings
HEXFET POWER MOSFET SURFACE MOUNT (LCC-18)
20V Single N-Channel Hi-Rel MOSFET in a LCC-18 package
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| File Size |
122.67K /
7 Page |
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