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IRF[International Rectifier]
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| Part No. |
IRF2805
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| OCR Text |
...jmax
G
VDSS = 55V RDS(on) = 4.7m
S
Features
l l l l l
ID = 75A
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-... |
| Description |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET
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| File Size |
148.82K /
9 Page |
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Download Datasheet
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IRF[International Rectifier]
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| Part No. |
IRF5YZ48CM IRF5YZ48CM-15
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| OCR Text |
...3in./1.6mm from case for 10sec) 4.3 (Typical)
Units A
W
W/C
V mJ A mJ V/ns
o
C
g
www.irf.com
1
5/17/01
IRF5YZ48CM
...55V ,VGS=0V VDS = 44V, VGS = 0V, TJ =125C VGS = 20V VGS = -20V VGS =10V, ID = 18A VDS = 44V VDD = 28... |
| Description |
Avalanche Energy Ratings
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.029ohm, Id=18A*)
55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
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| File Size |
103.91K /
7 Page |
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it Online |
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Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
HUF75329D3 HUF75329D3S HUF75329D3ST HUF75329D3STNL HUF75329D3SNL
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| OCR Text |
...se Specified 55 55 20 20 Figure 4 Figure 6 128 0.86 -55 to 175 300 260 UNITS V V V A
Drain to Source Voltage (Note 1) . . . . . . . . . ....55V 1 1 10
1ms
10ms
100
200
1 0.01
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.1 10 1 tA... |
| Description |
20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 20 A, 55 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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| File Size |
219.94K /
10 Page |
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it Online |
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Price and Availability
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