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  400v-0.48-10a- Datasheet PDF File

For 400v-0.48-10a- Found Datasheets File :: 351    Search Time::3.203ms    
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    Q67040S4726 IGW75N60T

INFINEON[Infineon Technologies AG]
Part No. Q67040S4726 IGW75N60T
OCR Text ... 260 V s W C VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s 1) Allowed number of short circuits: <1000; time b...
Description 1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
Low Loss IGBT in Trench and Fieldstop technology

File Size 365.66K  /  12 Page

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    IRFP32N50KPBF

International Rectifier
Part No. IRFP32N50KPBF
OCR Text ...DS = 500V, VGS = 0V 250 A VDS = 400V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions --- S VDS = 50V, ID = 32A 1...0 13.5 C --- 30 --- A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Condit...
Description HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.135Ω , ID = 32A )
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.135ヘ , ID = 32A )

File Size 183.48K  /  8 Page

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    APTM100H45SCTG

Microsemi Corporation
Part No. APTM100H45SCTG
OCR Text ... 1MHz, VR = 200V f = 1MHz, VR = 400V Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction...0.35 1.2 1.5 150 125 100 4.7 160 Unit C/W Operating junction temperature range Storage Temper...
Description Full bridge Series & SiC parallel diodes MOSFET Power Module

File Size 297.13K  /  8 Page

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    APTM100H45SCT

Advanced Power Technology
Part No. APTM100H45SCT
OCR Text ... 1MHz, VR = 200V f = 1MHz, VR = 400V 90 66 APT website - http://www.advancedpower.com 2-7 APTM100H45SCT - Rev 1 IF = 10A, VR ...0 APTM100H45SCT Series diode ratings and characteristics Symbol Characteristic IF(A V) Maximum ...
Description Full bridge Series & SiC parallel diodes MOSFET Power Module

File Size 321.83K  /  7 Page

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    FQP10N50CF FQPF10N50CF FQP10N50CF08

FAIRCHILD SEMICONDUCTOR CORP
Part No. FQP10N50CF FQPF10N50CF FQP10N50CF08
OCR Text ... 25C VDS = 500V, VGS = 0V VDS = 400V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 5A VDS = 40V, ...0 ------ Typ -0.5 -----0.5 15 1610 177 16 29 80 141 80 43 7.5 18.5 ---50 0.1 Max Units --10 ...
Description 500V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail
500V N-Channel MOSFET Improved dv/dt capability

File Size 978.87K  /  10 Page

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    APT40N60LCF APT40N60LCFG APT40N60B2CFG APT40N60B2CF

Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
Part No. APT40N60LCF APT40N60LCFG APT40N60B2CFG APT40N60B2CF
OCR Text ...INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 40A, RG = 5 INDUCTIVE SWITCHING @ 125C VDD = 400V, VGS = 15V ID = 40A, RG = 5 6 J...0.30 31 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pu...
Description Super Junction FREDFET 40 A, 600 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA

File Size 309.47K  /  5 Page

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    IRFIB5N65APBF

International Rectifier
Part No. IRFIB5N65APBF
OCR Text ...= 3.1A 48 ID = 5.2A 12 nC VDS = 400V 19 VGS = 10V, See Fig. 6 and 13 --- VDD = 325V --- ID = 5.2A ns --- RG = 9.1 --- RD = 62,See Fig. 10 ...0.1 0.1 20s PULSE WIDTH 4.5V TJ = 25 C 1 10 100 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 ...
Description SMPS MOSFET

File Size 215.65K  /  8 Page

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    IRF[International Rectifier]
Part No. 19MT050XF
OCR Text ...= V GS = V GS = 500V, V GS = 0V 400V, V GS = 0V, T J = 125C 30V - 30V (4) Dynamic Characteristics @ TJ = 25C (unless otherwise specified)...0 MHz (4) ns pF Diode Characteristics @ TJ = 25C (unless otherwise specified) Parameter...
Description 500V Single N-Channel HEXFET Power MOSFET in a MTP package
FULL BRIDGE FREDFET MTP HEXFET POWER MOSFET
From old datasheet system

File Size 184.40K  /  10 Page

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    IRFMG50

International Rectifier
Part No. IRFMG50
OCR Text ...= -20V VGS =10V, ID =5.6A VDS = 400V VDD = 400V, ID = 5.6A, RG = 2.35 ns nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) Ciss C oss C rss CDC Input Capacitance Output Capacit...
Description 1000V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
POWER MOSFET 1000V, N-CHANNEL THRU-HOLE (TO-254AA)

File Size 136.83K  /  7 Page

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    IRF[International Rectifier]
Part No. 20ETF06 20ETF02 20ETF04
OCR Text ...ode x 100 = VRRM 02 = 200V 04 = 400V 06 = 600V 1 CATHODE 3 ANODE 6 www.irf.com 20ETF.. QUIETIR Series Bulletin I2109 rev. B 03/99 WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR...
Description FAST SOFT RECOVERY RECTIFIER DIODE

File Size 185.54K  /  7 Page

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