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For 4.4m Found Datasheets File :: 187 Search Time::0.813ms
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				TE Connectivity, Ltd. Grayhill, Inc. GRAYHILL INC
Part No.	44HS30-02-1-12N 44A30-02-1-12N 42A36-01-1-10S 09M30-01-1-12N
OCR Text	... 01 to 04 3 02 to 04 n or s 44a 44m solder lug 01 to 04 4 02 or 03 n or s 44s ? sealed 01 to 04 5 02 n or s ? 44h 125 temperature rating 01 to 04 6 02 n or s ? 44hs 125 temp rating, sealed 45 01 to 04 1 02 to 08 n or s 01 to 03 2 02 to 04 n...
Description	1 in Dia., 1 Amp Multi Deck Rotary Switch ROTARY SWITCH-12POSITIONS, SP12T, LATCHED, 0.25A, 28VDC, PANEL MOUNT-THREADED 1 in Dia., 1 Amp Multi Deck Rotary Switch ROTARY SWITCH-12POSITIONS, SP12T, LATCHED, 1A, 28VDC, PANEL MOUNT-THREADED 1 in Dia., 1 Amp Multi Deck Rotary Switch ROTARY SWITCH-10POSITIONS, SP10T, LATCHED, 1A, 28VDC, PANEL MOUNT-THREADED .5 in Dia., 1/4 Amp Multi Deck Rotary Switch
File Size	379.83K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFR3411 IRFR3411PBF IRFU3411PBF
OCR Text	...FET D VDSS = 100V RDS(on) = 44m Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with th...
Description	HEXFET Power MOSFET
File Size	223.72K / 10 Page	View it Online	Download Datasheet

				Connor-Winfield Corporation
Part No.	D75F
OCR Text	...ormation d75f-13.0m, d75f-19.44m, d75f-25.0m* or d57f-027.0m* * for the tape and reel option, add -t to the end of the part number. example: d75f-13.0m-t enable / disable input characteristics (pad 8) parameter minimum nominal m...
Description	5x7mm Precision TCXO In Stock at Digi-Key
File Size	243.22K / 2 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDM3622
OCR Text	... 4.4A, 60m Features r DS(ON) = 44m (Typ.), VGS = 10V, ID = 4.4A Qg(tot) = 13nC (Typ.), VGS = 10V Low Miller Charge Low QRR Body Diode Optimized efficiency at high frequencies UIS Capability (Single Pulse and Repetitive Pulse) General De...
Description	100V N-Channel UltraFet Trench.MOSFET N-Channel PowerTrench MOSFET
File Size	166.17K / 11 Page	View it Online	Download Datasheet

				Guangdong Kexin Industrial Co.,Ltd
Part No.	2SK3377
OCR Text	...es low on-resistance r ds(on)1 =44m max. (v gs =10v,i d =10a) r ds(on)2 =78m max. (v gs =4.0v,i d =10a) low c iss :c iss = 760 pf typ. built-in gate protection diode absolute maximum ratings ta = 25 parameter symbol rating unit drain to sou...
Description	MOS Field Effect Transistor
File Size	42.18K / 1 Page	View it Online	Download Datasheet

				Stanson Technology
Part No.	ST2304SRG
OCR Text	...re 30v/3.2a, r ds(on) = 44m-ohm (typ.) @vgs = 10.0v 30v/2.0a, r ds(on) = 60m-ohm @vgs = 4.5v 30v/1.5a, r ds(on) =90 m-ohm @vgs = 2.5v super high density cell design for extremely low r ds(on) exceptiona...
Description	ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
File Size	625.70K / 6 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AON2260
OCR Text	44m w r ds(on) (at v gs = 4.5v) < 53m w symbol v ds the aon2260 combines advanced trench mosfet technology with a low resistance package to provide ds(on) .this device is ideal for boost converters and synchronous rectifiers for consum...
Description	60V N-Channel MOSFET
File Size	262.41K / 5 Page	View it Online	Download Datasheet

				ShenZhen FreesCale Electronics. Co., Ltd
Part No.	AOC2800
OCR Text	44m w r ss(on) (at v gs =3.1v) < 49m w r ss(on) (at v gs =2.5v) < 61m w the aoc2800 uses advanced trench technology to prov ide excellent r ss(on) , low gate charge and operation with gate voltages as low as 2.5v while retaining a 1...
Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	299.16K / 5 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors Alpha & Omega Semicondu...
Part No.	AOD40208
OCR Text	...n) <18m w (v gs =10v) r ds(on) <44m w (v gs =4.5v) 100% uis tested! 100% rg tested! general description theaod402usesadvancedtrenchtechnologyanddesigntoprovideexcellentr ds(on) withlowgate charge.thisdeviceissuitableforusein...
Description	N-Channel Enhancement Mode Field Effect Transistor
File Size	241.98K / 5 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AO4606 AO460612
OCR Text	...v) < 42m (v gs =4.5v) < 44m (vgs=-4.5v) 100% uis tested 100% uis tested 100% r g tested 100% r g tested the ao4606 uses advanced trench technology mosfets to provide excellent r ds(on) and low gate charge. the complementary m...
Description	30V Complementary MOSFET
File Size	543.26K / 9 Page	View it Online	Download Datasheet

For 4.4m Found Datasheets File :: 187 Search Time::0.813ms
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