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Elite Semiconductor Mem...
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Part No. |
M53D2561616A-2F
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OCR Text |
... 4m x16 bit x 4 banks mobile ddr sdram features ? jedec standard ?...row address a0~a12 - column address a0~ a8 a10/ap : auto precharge ba0~ba1 : bank selects (4 bank... |
Description |
Bi-directional data strobe (DQS)
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File Size |
719.39K /
47 Page |
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Elite Semiconductor Mem...
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Part No. |
M52D2561616A-2F
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OCR Text |
... 4m x 16 bit x 4 banks mobile synchronous dram features ? 1.8v power supply ? lvcmos compatible with...row / column address are multiplexed on the same pins. row address : ra0~ ra12, column address : ... |
Description |
LVCMOS compatible with multiplexed address
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File Size |
793.18K /
46 Page |
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it Online |
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Hitachi Semiconductor
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Part No. |
HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM514400BLTT-8 HM514400CLTT-6 HM514400CLTT-7 HM514400CLTT-8
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OCR Text |
4-bit Dynamic Random Access Memory
Rev. 1.0 Nov. 29, 1994
The Hitachi HM514400B/BL, HM514400C/CL are CMOS dynamic RAM organized 1,048,576w...Row address strobe Column address strobe Read/Write enable Output enable Power (+5 V) Ground
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Description |
1,048,576-word x 4-bit dynamic random access memory, 80ns 1,048,576-word x 4-bit dynamic random access memory, 60ns 1/048/576-word X 4-bit Dynamic Random Access Memory 1,048,576-word x 4-bit dynamic random access memory, 70ns
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File Size |
231.12K /
27 Page |
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it Online |
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Price and Availability
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