3.3m pdf Datasheet P14 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : LSCR6C60 2N700 NP2502 M063A RG4A04 C5363 64BEEG NJM2247
	Product Description
	Full Text Search

3.3m Datasheet PDF File

For 3.3m Found Datasheets File :: 295 Search Time::0.86ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |

				Advanced Power Electronics Corp.
Part No.	AP4565M
OCR Text	...2 S1 G1 S1 40V 25m 7.6A -40V 33m -6.5A P-CH BVDSS RDS(ON) ID SO-8 SO-8 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan...
Description	N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	94.43K / 7 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP4565GM
OCR Text	...1 S1 G1 S1 40V 25m 7.6A -40V 33m -6.5A P-CH BVDSS RDS(ON) ID SO-8 SO-8 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan...
Description	30V N-Channel PowerTrench MOSFET N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	95.18K / 7 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP4412M
OCR Text	... BVDSS RDS(ON) ID G S 25V 33m 7A SO-8 S S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effec...
Description	N-CHANNEL ENHANCEMENT MODE
File Size	77.76K / 6 Page	View it Online	Download Datasheet

				Chino-Excel Technology
Part No.	CEM330711
OCR Text	33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 CEM3307 D1 7 D2 6 D2 5 ...
Description	P-Channel Enhancement Mode Field Effect Transistor
File Size	454.87K / 4 Page	View it Online	Download Datasheet

				Chino-Excel Technology
Part No.	CEM3317
OCR Text	33m @VGS = -10V. RDS(ON) = 52m @VGS = -4.5V. -30V, -4.9A, RDS(ON) = 52m @VGS = -10V. RDS(ON) = 85m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquire...
Description	P-Channel Enhancement Mode Field Effect Transistor
File Size	458.17K / 7 Page	View it Online	Download Datasheet

				Chino-Excel Technology
Part No.	CEM4435A10
OCR Text	33m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. CEM4435A D 8 D 7 D 6 D 5 SO-8 1 1 S 2 S 3 ...
Description	P-Channel Enhancement Mode Field Effect Transistor
File Size	389.44K / 4 Page	View it Online	Download Datasheet

				Integrated Device Technology
Part No.	MK1493-03B MK1493-03BGILF MK1493-03BGILFTR MK1493-03BGLF MK1493-03BGLFTR
OCR Text	... State 1 0 0 0 1 1 1 1 00=83.33M, 01=71.42M 10=66.66M, 11=OFF SMBus Table 3 (cont.): Reserved Byte 6 Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 Pin # Control Function RESERVED RESERVED RESERVED RESERVED RESERVED RESERVED RESERVE...
Description	PCI CLOCK GENERATOR
File Size	232.56K / 19 Page	View it Online	Download Datasheet

				Diodes Incorporated
Part No.	ZXTP25015DFH ZXTP25015DFHTA
OCR Text	33m VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25015DFH Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The c...
Description	15V, SOT23, PNP medium power transistor
File Size	345.01K / 6 Page	View it Online	Download Datasheet

				Chino-Excel Technology
Part No.	CES2312
OCR Text	33m @VGS = 4.5V. RDS(ON) = 40m @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. D G D G SOT-23 S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source ...
Description	N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor
File Size	270.62K / 4 Page	View it Online	Download Datasheet

				Chino-Excel Technology
Part No.	CEM317810
OCR Text	33m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 CEM3178 PRELIMINARY D2 6 D2 5 SO-8 1 1 S1 ...
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	375.55K / 4 Page	View it Online	Download Datasheet

For 3.3m Found Datasheets File :: 295 Search Time::0.86ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |