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MC10158 203750G 390LS X5R1C UPC812 SEC22CR 37DUR ZX84C5V1
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    PAA132 PAA132S PAA132STR

Clare, Inc.
Part No. PAA132 PAA132S PAA132STR
OCR Text ...5 TYP.) (0.130) 6.350 0.127 (0.250 0.005) 9.144 TYP. (0.360 TYP.) 0.457 0.076 (0.018 0.003) 8.077 0.127 (0.318 0.005 ) 9.144 0.508 (0...300 0.005) 7.620 0.127 (0.300 0.005) 8 Pin DIP Surface Mount ("S" Suffix) 2.540 0.127 7.6...
Description Dual Pole OptoMOS Relays

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    Vishay
Part No. GWS100 GWS15 GWS20 GWS35 GWS220 GWS25 GWS75
OCR Text ...NG P40C W 15 LIMITING VOLTAGE V 250 RESISTANCE RANGE TOLERANCE % 10 5 3 2 10 5 10 5 10 5 3 2 10 5 10 5 10 5 3 2 10 5 10 5 10 5 3 2 10 5 10 5...300 GWS 20 E GWS 20 Ni GWS 25 SL SS -- -- 13 x 55 15 15 25 300 300 300 E 12 E 24 E...
Description (GWS Series) Vitreous Wirewound Resistors

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    GWM120-0075P3

IXYS Corporation
Part No. GWM120-0075P3
OCR Text ...-40...+175 -55...+125 1000 50 - 250 A C C V~ N junction - case (typ.) Cth1 = 0.039 J/K; Rth1 = 0.28 K/W Cth2 = 0.069 J/K; Rth2 = 0.57 K/W T...300 0.0 -50 0 50 100 TVJ 150 C Fig. 1: typ. output characteristics [VDS = ID (RDSo...
Description Six-Pack MOSFET Modules

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    Toshiba
Part No. TB62706BFG TB62706BNG
OCR Text ...nt matching) REXT = 470 REXT = 250 (Include current matching) REXT = 250 SYMBOL VIH TEST CIRCUIT - CONDITION Ta = - 40~85C MIN 0.7 VDD GN...300 200 0.6 5.8 10.7 16.0 28.3 MAX VDD V 0.3 VDD 10 0.4 - 45.9 mA 45.3 6.0 86.8 mA 86.2 6.0 5.0 600 ...
Description 16BIT SHIFT REGISTER

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    FDD8426H

Fairchild Semiconductor
Part No. FDD8426H
OCR Text ... to Source Leakage Current ID = 250 A, VGS = 0 V ID = -250 A, VGS = 0 V ID = 250 A, referenced to 25 C ID = -250 A, referenced to 25 C VDS =...300 pF pF pF www.DataSheet4U.com Switching td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd Char...
Description Dual P and N-Channel MOSFET

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    OMS410A OMS510 OMS410

Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. OMS410A OMS510 OMS410
OCR Text ...-Source Breakdown Voltage, ID = 250 A, VGS = 0 Zero Gate Voltage Drain Current = VGS, VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 70C Gate-B...300 sec, Duty Cycle 1.5% 2.1 - 54 OMS410, OMS410A, OMS510 ELECTRICAL CHARACTERISTICS: OMS520 ...
Description 3 PHASE, LOW VOLTAGE, LOW RDS(on), MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE 3相,低电压,低的RDSon)MOSFET的电桥电路在一个塑料包
3 PHASE LOW VOLTAGE LOW RDS(on) MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE

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    MMQA-D

ON Semiconductor
Part No. MMQA-D
OCR Text ...0 500 4.3 300 2.45 9.8 10.9 100 250 mmqa12vt1,t3 11.4 12 12.6 1.0 75 9.1 80 1.39 17.3 14 mmqa13vt1 12.4 13 13.7 1.0 75 9.8 80 1.29 18.6 15 mmqa15vt1,t3 14.3 15 15.8 1.0 75 11 80 1.1 21.7 16 mmqa18vt1,t3 17.1 18 18.9 1.0 75 14 80 0.923...
Description SC-59 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection

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    BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X
OCR Text ... 1.6 1.9 TYP. MAX. 20 15 70 300 250 - - - - - 1.6 2.1 - pF GHz dB dB dB dB dB dB UNIT V V mA mW Philips Semiconductors Product specification NPN 9 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Sys...
Description NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体

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    APTGT150DU170

Advanced Power Technology
Part No. APTGT150DU170
OCR Text ... May, 2005 Max ratings 1700 250 150 300 20 890 Unit V A V W APTGT150DU170 All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector ...
Description Dual common source Trench Field Stop IGBT Power Module

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    TD131N TT131N DT131N08KOF-A DT131N

EUPEC GMBH ?CO KG
Part No. TD131N TT131N DT131N08KOF-A DT131N
OCR Text ... / current conduction angle 250 180 200 PTAV [W] 150 0 90 60 = 30 120 DC tC 130 0 100 [C] 80 100 60 50 40 20 ...300 Id [A] 400 40 60 80 100 tA [C] 0 100 200 300 Id [A] 400 Bild / Fig...
Description EUPEC 欧派
220 A, 800 V, SCR

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