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  20v-100v Datasheet PDF File

For 20v-100v Found Datasheets File :: 8687    Search Time::1.297ms    
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    SSF1007-15

GOOD-ARK Electronics
Part No. SSF1007-15
OCR Text ...rward leakage 100 vgs = 20v igss gate-to-source reverse leakage -100 na vgs = -20v qg total gate charge 243 170 q...100v n-channel mosfet www.goodark.com page 3 of 5 ...
Description 100V N-Channel MOSFET
   100V N-Channel MOSFET

File Size 1,059.37K  /  5 Page

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    JANS2N6849U JANTX2N6849U JANTXV2N6849U

International Rectifier
Part No. JANS2N6849U JANTX2N6849U JANTXV2N6849U
OCR Text ...eakage forward ? ? -100 v gs =-20v i gss gate-to-source leakage reverse ? ? 100 v gs =20v q g total gate charge ? ? 3 5 v gs =-10v, id =...100v, t j 150c suggested rg =7.5 ? ? repetitive rating; pulse width limited by maximum junct...
Description -100V Single P-Channel Hi-Rel MOSFET in a 18-pin LCC package

File Size 200.11K  /  7 Page

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    MP3352 MP3352DQ

Monolithic Power Systems
Part No. MP3352 MP3352DQ
OCR Text ...t 100v/div. v out 50v/div. v sw 20v/div. v charge 5v/div. v rdby 5v/div. v sw 20v/div. i inductor 2a/div. i in 500ma/div. v out 100v/div. v charge 5v/div. v rdby 5v/div. i in 500ma/div. v out 100v/div. v charge 5v/div. ...
Description 60V, 2.5A Integrated Photo Flash Charger with IGBT Driver and Quench

File Size 432.75K  /  9 Page

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    IRFF110 2474

International Rectifier
Part No. IRFF110 2474
OCR Text ...= 80V VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =10V, ID = 3.5A VDS= 50V VDD = 50V, ID = 3.5A, RG = 7.5 Drain-to-Source Breakdown Volt...100V, TJ 150C Suggested RG =7.5 Pulse width 300 s; Duty Cycle 2% Case Outline and Dimensions...
Description 100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
From old datasheet system
HEXFET? TRANSISTOR

File Size 130.06K  /  7 Page

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    IRFE120 JANTX2N6788U

IRF[International Rectifier]
Part No. IRFE120 JANTX2N6788U
OCR Text ... =80V VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =10V, ID= 4.5A VDS =50V VDD =50V, ID =4.5A, RG =7.5 Drain-to-Source Breakdown Voltage ...100V, TJ 150C Suggested RG =7.5 Pulse width 300 s; Duty Cycle 2% Case Outline and Dimensions...
Description 100V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package
HEXFET?TRANSISTORS
HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)

File Size 225.14K  /  7 Page

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    INTERSIL[Intersil Corporation]
Part No. FRS9240H FRS9240R FRS9240D FN3265
OCR Text ... 1mA VDS = VGS, ID = 1mA VGS = -20V VGS = +20V VDS = -200V, VGS = 0 VDS = -160V, VGS = 0 VDS = -160V, VGS = 0, TC = +125oC Time = 20S VGS = -10V, ID = 7A VGS = -10V, ID = 4A VDD = -100V, ID = 7A Pulse Width = 3s Period = 300s, Rg = 25 0 VG...
Description 7A/ -200V/ 0.735 Ohm/ Rad Hard/ P-Channel Power MOSFETs
7A, -200V, 0.735 Ohm, Rad Hard, P-Channel Power MOSFETs
From old datasheet system

File Size 47.82K  /  6 Page

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    Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. FRM9240H FRM9240R FRM9240D FN3242
OCR Text ... 1mA VDS = VGS, ID = 1mA VGS = -20V VGS = +20V VDS = -200V, VGS = 0 VDS = -160V, VGS = 0 VDS = -160V, VGS = 0, TC = +125oC Time = 20s VGS = -10V, ID = 7A VGS = -10V, ID = 4A VDD = -100V, ID = 7A Pulse Width = 3s Period = 300s, Rg = 25 0 VG...
Description 7A, -200V, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs 7 A, 200 V, 0.72 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
From old datasheet system

File Size 46.78K  /  6 Page

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    IRF5N5210

International Rectifier
Part No. IRF5N5210
OCR Text ...-80V, VGS = 0V, TJ =125C VGS = -20V VGS = 20V VGS =-10V, ID = -19A VDS = -80V VDD = -50V, ID = -19A, VGS =-10V, RG = 2.5 BVDSS Drain-to-S...100V, TJ 150C Case Outline and Dimensions -- SMD-1 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: ...
Description -100V Single P-Channel Hi-Rel MOSFET in a SMD-2 package
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.060ohm, Id=-31A)
POWER MOSFET P-CHANNEL(Vdss=-100V/ Rds(on)=0.060ohm/ Id=-31A)

File Size 116.50K  /  7 Page

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    SGW15N120 SGP15N120 SGP15N12009 SGW15N120FKSA1

Infineon Technologies AG
Infineon Technologies A...
Part No. SGW15N120 SGP15N120 SGP15N12009 SGW15N120FKSA1
OCR Text ...te LE IC(SC) V C E =0V,V GE =20V V C E = 20V, I C = 15A V C E = 25V, V G E = 0V, f= 1 M Hz V C C = 9 60V, I C = 15A V G E = 1 5V PG -TO -220-3-1 PG -TO -247-3 V G E = 1 5V,t S C 5s 100V V C C 1200V, T j 150 C - 1250 100 65 130 7 ...
Description Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

File Size 401.04K  /  12 Page

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