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  2.21m Datasheet PDF File

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    Niko
Part No. P2103NV
OCR Text ... i dm 28 -24 a t c = 25 c 2 power dissipation t c = 70 c p d 1.3 w junction & storage temperature range t j , t stg -55 to ...21m 7a p-channel -30 35m -6a 2 oct-22-2003 n- & p-channel enhance...
Description N- & P-Channel Enhancement Mode Field Effect Transistor

File Size 687.10K  /  8 Page

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    DMC3021LSD DMC3021LSD-13

Diodes Incorporated
Part No. DMC3021LSD DMC3021LSD-13
OCR Text 2 1 of 8 www.diodes.com may 2010 ? diodes incorporated dmc3021lsd new product complementary pair enh ancement mode mosfet features ? low on-resistance ? n-channel: 21m ? @ 10v 32m ? @ 4.5v ? p-channel: ...
Description COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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    P2103HVG

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ETC
Part No. P2103HVG
OCR Text ... VDS VGS LIMITS 30 20 7 6 40 2 1.3 -55 to 150 275 UNITS V V TC = 25 C TC = 70 C TC = 25 C TC = 70 C ID IDM PD Tj, Tstg TL A W C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1 2 SYMBOL RJA ...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

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    Princeton Technology Co...
PTC[Princeton Technology Corp]
Part No. PT2399 PT2399S
OCR Text 2-29162151 Fax: 886-2-29174598 URL: http://www.princeton.com.tw PT2399 DESCRIPTION PT2399 is an echo audio processor IC utilizing CMO...21M 32.6ms 0.13% 0.5 22M 31.3ms 0.13% Note: R = External Resistor (Ohms), please refer to PT23...
Description Echo Processor IC

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    AON7900

http://
Alpha & Omega Semiconductors
Part No. AON7900
OCR Text ...0 60 72 72 steady-state r jc 6 2 7.5 2.5 maximum junction-to-case c/w c/w maximum junction-to-ambient a d r ja maximum junction-to-ambient a c/w t c =25c t c =100c power dissipation b p d power dissipation a p dsm w t a =70c t a =25c...
Description 30V Dual Asymmetric N-Channel MOSFET

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    CEM3138

CET
Chino-Excel Technology
Part No. CEM3138
OCR Text ...ace mount Package. SO-8 1 1 S1 2 G1 D1 8 D1 7 CEM3138 5 D2 6 D2 5 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unles...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

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    Stackpole Electronics, Inc.
Part No. RMCS1/162611A RMCS1/204301A RMCS1/204301R
OCR Text ...- 10m 10 - 22m 100 ppm/oc 10 - 2.2m - 200 ppm/oc 2.21m - 10m 10 - 22m 100 ppm/oc 10 - 1m - 200 ppm/oc 1.02m - 10m 10 - 24m 100 ppm/oc 10 - 1m - 200 ppm/oc 1.02m - 10m 10 - 22m 100 ppm/oc 10 - 1m - 200 ppm/oc - 10 - 22m 100 ppm/oc 1...
Description RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 261 ohm, SURFACE MOUNT, 0603 CHIP, ROHS COMPLIANT
RESISTOR, METAL GLAZE/THICK FILM, 0.05 W, 1 %, 200 ppm, 430 ohm, SURFACE MOUNT, 0201 CHIP, ROHS COMPLIANT

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    Alpha
Part No. AO8822 AO8822L
OCR Text ...5v) r ds(on) < 32m ? (v gs = 2.5v) r ds(on) < 50m ? (v gs = 1.8v) g1 s1 s1 d1/d2 g2 s2 s2 d1/d2 1 2 3 4 8 7 6 5 tssop-8 top view g1 d1 s1 g2 d2 s2 general description the ao8822 uses advanced trench technology to provide excelle...
Description Common-Drain Dual N-Channel Enhancement Mode Field 常见的漏双N沟道增强型场

File Size 111.59K  /  4 Page

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    APM7313 APM7317KCTU APM7317KCTR APM7313KC-TR

ANPEC[Anpec Electronics Coropration]
ETC[ETC]
ANPEC Electronics Corporation
Part No. APM7313 APM7317KCTU APM7317KCTR APM7313KC-TR
OCR Text ...escription SO-8 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top View Applications * Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. G1 D1 D1 D2 D2 G2 S1 S2 N-Channel MOS...
Description 30 V, N-channel dual enhancement mode MOSFET
Dual N-Channel Enhancement Mode MOSFET

File Size 110.51K  /  9 Page

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    FDS8978

Fairchild Semiconductor
Part No. FDS8978
OCR Text ...speed. 5 6 7 8 Q1 Q2 4 3 2 1 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TA = 25oC, VGS = 10V, RJA =...
Description Dual N-Channel PowerTrench MOSFET

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