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SR2010 W19B160 OP555B 30G120 JHV34H20 178M15 XXXFXX APGM0028
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  2-10u1b Datasheet PDF File

For 2-10u1b Found Datasheets File :: 160    Search Time::1.625ms    
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    TK6A50D

Toshiba Semiconductor
Part No. TK6A50D
OCR Text ...e on-resistance: r ds (on) = 1.2 ? (typ.) ? high forward transfer admittance: |y fs | = 2.5 s (typ.) ? low leakage current: i dss ...10u1b weight: 1.7 g (typ.) characteristics symbol max unit thermal resistance, channel to case r ...
Description Switching Regulator Applications

File Size 167.28K  /  6 Page

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    TK13A45D

Toshiba Semiconductor
Part No. TK13A45D
OCR Text ... ? enhancement mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbo...10u1b weight: 1.7 g (typ.) 1 3 2 1: gate 2: drain 3: source internal connection tk13a45d 2...
Description Switching Regulator Applications

File Size 176.37K  /  6 Page

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    TK4A60DA

Toshiba Semiconductor
Part No. TK4A60DA
OCR Text ...ansfer admittance: ? y fs ? = 2.2 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 600 v) ? enhancement-mode: v th = 2....10u1b weight: 1.7 g (typ.) 1: gate 2: drain 3: source 1 3 2 internal connection tk4a60da 2...
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

File Size 194.83K  /  6 Page

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    Toshiba
Part No. K15A60U
OCR Text ... pulse avalanche energy (note 2) e as 81 mj avalanche current i ar 15 a repetitive avalanche energy (note 3) e ar 4 mj channel te...10u1b weight: 1.7 g (typ.) 1 3 2 1: gate 2: drain 3: source start of commercial production 200...
Description TK15A60U

File Size 260.71K  /  6 Page

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    TOSHIBA
Part No. TJ20A10M3
OCR Text ... enhancement-model: v th = ? 2.0 to ? 4.0 v (v ds = ? 10 v, i d = ? 1 ma) absolute maximum ratings (ta = 25c) characteristic...10u1b weight: 1.7 g (typ.) 1 3 2 start of commercial production 2009-03 tj20a10m3 2013-11-01 ...
Description Power MOSFET (P-ch single)

File Size 305.74K  /  7 Page

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    TK4A53D

Toshiba Semiconductor
Part No. TK4A53D
OCR Text ...) ? enhancement mode: v th = 2.4 to 4.4 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics sym...10u1b weight: 1.7 g (typ.) characteristics symbol max unit thermal resistance, channel to case r ...
Description Field Effect Transistor
Switching Regulator Applications
   Switching Regulator Applications

File Size 184.37K  /  6 Page

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    TOSHIBA
Part No. TK19A45D
OCR Text ...) ? enhancement-mode: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbo...10u1b weight : 1.7 g (typ.) 1 3 2 internal connection 1: gate 2: drain 3: source start of com...
Description Power MOSFET (N-ch 250V<VDSS≤500V)

File Size 197.53K  /  6 Page

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    TK6A53D

Toshiba Semiconductor
Part No. TK6A53D
OCR Text ... transfer admittance: |y fs | = 2.5 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 525 v) ? enhancement mode: v th = 2....10u1b weight: 1.7 g (typ.) characteristics symbol max unit thermal resistance, channel to case r ...
Description Switching Regulator Applications

File Size 178.91K  /  6 Page

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    TOSHIBA
Part No. TK4A53D
OCR Text ...) ? enhancement mode: v th = 2.4 to 4.4 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics sym...10u1b weight: 1.7 g (typ.) characteristics symbol max unit thermal resistance, channel to case r ...
Description Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 185.23K  /  6 Page

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For 2-10u1b Found Datasheets File :: 160    Search Time::1.625ms    
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