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				Rohm CO.,LTD.
Part No.	2SC5060 2SC5060TV2M
OCR Text	2SC5060 Transistors Power transistor (9010V, 3A) 2SC5060 !Features 1) Built-in zener diode between collector and base. 2) Zener diode ...1000 - - - - - - - Typ. - - - - - - - 80 20 0.2 5 0.6 Max. 100 100 10 3 2500 1.5 2 - - - - - Unit V ...
Description	Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) Power transistor (9010V, 3A) Power transistor (9010V/ 3A) SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
File Size	50.71K / 1 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5063
OCR Text	...switching 10.00.3 1.50.1 8.50.2 6.00.5 3.40.3 Unit: mm 1.00.1 s Features q q q q 1.5max. 1.1max. High-speed switching Hig...1000 hFE -- IC IC/IB=5 VCE=5V 1000 300 100 30 10 3 1 0.3 1 0.01 0.1 0.001 0.003 fT -- IC VCE...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	60.70K / 3 Page	View it Online	Download Datasheet

				SANKEN[Sanken electric]
Part No.	2SC5071
OCR Text	2SC5071 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C)...1000 Collector Current I C( A) Safe Operating Area (Single Pulse) 30 10 0 s Reverse Bias ...
Description	Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
File Size	23.88K / 1 Page	View it Online	Download Datasheet

				Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
Part No.	2SC5077 2SC5077A
OCR Text	... s Features q q q q q 4.60.2 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip High-speed switching High collector to base voltage VC...1000 VCE=5V 1000 fT -- IC VCE=10V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, POWER TRANSISTOR
File Size	61.72K / 3 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5080
OCR Text	2SC5080 Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features * High gain bandwidth product fT = 13.5 GHz Typ * ...1000 1200 1400 1600 1800 2000 S11 MAG. 0.798 0.699 0.592 0.532 0.465 0.432 0.401 0.390 0.373 0.373 A...
Description	Silicon NPN Transistor Silicon NPN Epitaxial
File Size	47.56K / 8 Page	View it Online	Download Datasheet

				http:// PANASONIC[Panasonic Semiconductor]
Part No.	2SD1010
OCR Text	2 4.00.2 q q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage ...1000 0.05 200 80 2000 0.2 V MHz mV min typ max 100 1 Unit nA A V V V *h FE Rank classificat...
Description	Silicon NPN epitaxial planer type(For low-frequency amplification)
File Size	37.40K / 2 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SD1022
OCR Text	...ion Voltage V (sat) I = 3mA Max 2.0 V BE B Thermal Resistance AEjc Junction to case Max 4.17 *Z/W Transition Frequency fT V = 10V, 0.5A = TY...1000 25C VCE = 3V Pulse width = 300s 1 8 0C -25C 100 -55C 0.1 Collector Current...
Description	Darlington Transistor(5A NPN)
File Size	273.90K / 8 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SD1023
OCR Text	...ion Voltage V (sat) I = 5mA Max 2.0 V BE B Thermal Resistance AEjc Junction to case Max 4.17 *Z/W Transition Frequency fT V = 10V, 0.5A = TY...1000 25C 0C -25C -55C 1 8 100 0.1 Collector Current IC [A] 2SD1023 Saturati...
Description	Darlington Transistor(5A NPN)
File Size	290.46K / 9 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SD1024
OCR Text	...ion Voltage V (sat) I = 6mA Max 2.0V BE B Thermal Resistance AEjc Junction to case Max 2.5 *Z/W Transition Frequency fT V = 10V, 0.8A = TYP ...1000 25C VCE = 3V Pulse width = 300s 1 10 12 0C -25C -55C 100 0.1 Collector Cur...
Description	Darlington Transistor(8A NPN)
File Size	275.54K / 8 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SD1025
OCR Text	...on Voltage V (sat) I = 10mA Max 2.0V BE B Thermal Resistance AEjc Junction to case Max 2.5 *Z/W Transition Frequency fT V = 10V, 0.8A = TYP ...1000 25C 0C -25C 1 10 12 100 -55C 0.1 Collector Current IC [A] 2SD1025 Satu...
Description	Darlington Transistor(8A NPN)
File Size	343.47K / 8 Page	View it Online	Download Datasheet

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