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MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
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| Part No. |
MRF5S19130R3 MRF5S19130SR3
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| OCR Text |
...= 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 26 W Avg, IDQ = 1200 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Third Order Int... |
| Description |
N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
412.20K /
12 Page |
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it Online |
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REMEC
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| Part No. |
QBH8701
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| OCR Text |
...ons are in inches 25c -40c +70c 1930 1945 1960 1975 1990 gain (db) 25 26 27 28 29 30 mhz 1930 1945 1960 1975 1990 reverse isolation (db) -80 -70 -60 -50 -40 -30 -20 mhz 1930 1945 1960 1975 1990 input/output vswr 25 ? c 1.0 1.2 1.4 1.6 1.8 2... |
| Description |
Hybrid Amplifiers
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| File Size |
402.29K /
1 Page |
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it Online |
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Freescale Semiconductor, Inc
Motorola, Inc
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| Part No. |
MRF18090B MRF18090BS
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| OCR Text |
...VDD = 26 Vdc, IDQ = 750 mA, f = 1930 - 1990 MHz) Drain Efficiency @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1930 - 1990 MHz) Input Return Loss (1) (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 1930 - 1990 MHz) Output Mismatch Stress (V... |
| Description |
MRF18090B, MRF18090BS 1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS
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| File Size |
170.67K /
8 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
MW6S004NT107
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| OCR Text |
... im3 (dbc) ?28 ?16 ?20 ?24 1990 1930 irl g ps f, frequency (mhz) figure 3. two - tone wideband performance @ p out = 2 watts avg. 1980 1970 1960 1950 1940 18.4 18.2 ?35 34 33 32 ?31 ?33 d , drain efficiency (%) d 18 17.8 17.6 17.2 16.4 1... |
| Description |
RF Power Field Effect Transistor
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| File Size |
494.39K /
13 Page |
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it Online |
Download Datasheet |
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Price and Availability
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