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NTE Electronics, Inc.
NTE[NTE Electronics]
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| Part No. |
NTE355
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| OCR Text |
...B = 12.5V, IE = 0, f = 100kHz - 150 190 pF hFE VCE = 5V, IC = 500mA 15 - - Symbol Test Conditions Min Typ Max Unit
.725 (18.42) E .250 (6.35) B .225 (5.72) E C
.122 (3.1) Dia (2 Holes)
.860 (21.84)
.378 (9.56) .005 (0.15) .255 (... |
| Description |
Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz
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| File Size |
19.46K /
2 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE352
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| OCR Text |
...ain hFE IC = 5A, VCE = 5V 10 75 150 V(BR)EBO IE = 10mA, IC = 0 18 36 4 - - - - - - V V V Symbol Test Conditions Min Typ Max Unit
Electric...175MHz Pout = 75W, f = 175MHz Pout = 75W, f = 175MHz, VSWR = 30:1, All Phase Angles - 235 300 pF Sym... |
| Description |
Silicon Complementary Transistors Digital w/2 Built-In Bias 47k Resistors (Surface Mount)
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| File Size |
19.63K /
2 Page |
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it Online |
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Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
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| Part No. |
D1017UK
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| OCR Text |
...MHZ S MA R 50 !Freq !MHz 50 100 150 200 250 300 350 400 450 500 S11 mag 0.83 0.89 0.93 0.95 0.96 0.97 0.97 0.98 0.98 0.99 S21 mag 7.42 3.56 ...175MHz TEST FIXTURE
Substrate 1.6mm PTFE/glass, Er=2.5 All microsptrip lines W = 5mm T1,T2 T3 L1 L2... |
| Description |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(150W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应150W-28V-175MHz,单端))
METAL GATE RF SILICON FET
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| File Size |
222.43K /
5 Page |
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it Online |
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SEME-LAB[Seme LAB]
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| Part No. |
D1003UK
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| OCR Text |
...arameters
! # !Freq MHz 70 100 150 200 250 300 350 400 450 500 VDS = 28V, IDQ = 0.3A MHZ S MA R 50 S11 mag 0.83 0.87 0.91 0.93 0.95 0.97 0....175MHz TEST FIXTURE
Substrate 1.6mm PTFE/ glass, Er= 2.5 All microstrip lines W= 4.4mm T1 T2 T3 T4 ... |
| Description |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-175MHz,单端))
METAL GATE RF SILICON FET
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| File Size |
39.42K /
4 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Semiconductor
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| Part No. |
RD04HMS2
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| OCR Text |
... 2 4 6 8 10 12 14 16 18 130 140 150 160 170 180 f (mhz) p o u t ( w ) , g p ( d b ) , i d d ( a ) 0 10 20 30 40 50 60 70 80 90 d r a i n ...175mhz ta=+25deg.c, vds=12.5v,idq=0.1a, pin=0.2w
silicon rf power semiconductors rd04hms2 rohs com... |
| Description |
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W
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| File Size |
1,155.94K /
20 Page |
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it Online |
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