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STMicro
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| Part No. |
L4936E
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| OCR Text |
...ND EN CT PR SI VS1/VS2
14 13 12 11 10 9 8 7 6 5 4 3 2
TAB CONNECTED TO PIN 6
1
D94AT077
TAB CONNECTED TO PIN 6
D94AT078A
...35mm thick)
BLOCK DIAGRAM
VS1
OUT1
1.23V REG1 VS2
REFERENCE
OUT2 ADJ
EN REG2
... |
| Description |
ADVANCED VOLTAGE REGULATOR
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| File Size |
136.66K /
11 Page |
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it Online |
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Intersil Corp
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| Part No. |
SGT27B13
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| OCR Text |
...
80 50 50
-
pF pF pF
7-12
SGT23B13, SGT27B13, SGT27B27 Performance Curves
A VT 190 170 150 IT IH VBO mA CAPACITANCE (pF) 130 11...35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bott... |
| Description |
SINGLE BIDIRECTIONAL BREAKOVER DIODE,345V V(BO) MAX,TO-202VAR From old datasheet system
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| File Size |
25.87K /
4 Page |
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it Online |
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Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
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| Part No. |
S525T S525
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| OCR Text |
... -VGS(OFF) Min 20 7.5 5 Typ Max 12 50 14 2.5 Unit V V nA mA V
Electrical AC Characteristics
VDS = 10 V, ID = 10 mA, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate input capacitance Feedback ca... |
| Description |
N?Channel MOS-Fieldeffect Triode, Depletion Mode From old datasheet system N-Channel MOS-Fieldeffect Triode, Depletion Mode
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| File Size |
99.94K /
7 Page |
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it Online |
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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| Part No. |
HYS72V8000GU-10 HYS64V8000GU-10 HS648000 HYS64V8000GU
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| OCR Text |
...YS 64V8000GU HYS 72V8000GU Rows 12 12 Columns 9 9 Bank Select 2 2 Refresh 4k 4k Period 64 ms 64 ms Interval 15,6 s 15,6 s
Semiconductor Group
2
HYS64(72)V8000GU-10 8M x 64/72 SDRAM-Module
Pin Configuration
PIN # 1 2 3 4 5 6 7 8... |
| Description |
3.3V 8M x 64-Bit SDRAM Module 3.3V 8M x 72-Bit SDRAM Module 8M X 72 SYNCHRONOUS DRAM MODULE, 7 ns, DMA168 From old datasheet system
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| File Size |
67.96K /
11 Page |
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it Online |
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HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation]
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| Part No. |
RHRP640CC FN4464 RHRP660CC RHRP650CC
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| OCR Text |
...ecified RHRP640CC 400 400 400 6 12 60 50 10 -65 to 175 300 260 RHRP650CC 500 500 500 6 12 60 50 10 -65 to 175 300 260 RHRP660CC 600 600 600 ...35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bott... |
| Description |
6A, 600V Ultrafast Dual Diodes(6A, 600V 瓒?揩??????) 6A/ 400V - 600V Hyperfast Dual Diodes 6A, 600V Ultrafast Dual Diodes(6A, 600V 超快双二极管) 6A, 400V - 600V Hyperfast Dual Diodes From old datasheet system
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| File Size |
81.18K /
5 Page |
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it Online |
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Samsung Electronic
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| Part No. |
S6B0086X DS_S6B0086_R00
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| OCR Text |
...SC80
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
S6B0086
(100-QFP)
SC30 SC29 SC28 SC27 SC26 S...35mm * Input Lead Pitch = 0.80mm * Output Lead Pitch = 0.22mm
6
80CH COMMON/SEGMENT DRIVER FOR... |
| Description |
80CH Common/Segment Driver for Dot Matrix LCD From old datasheet system Mobile DDI
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| File Size |
195.14K /
38 Page |
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it Online |
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Vishay
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| Part No. |
S888T
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| OCR Text |
... IG1SS 50 nA IG2SS 50 nA IDSS 1 12 mA -VGS(OFF) 1.0 V -VGS(OFF) 0.8 V
Electrical AC Characteristics
VDS = 4 V, ID = 10 mA, VG2S = 2 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input ca... |
| Description |
N?Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode From old datasheet system
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| File Size |
75.27K /
5 Page |
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it Online |
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