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10.9a Datasheet PDF File

For 10.9a Found Datasheets File :: 5541 Search Time::1.484ms
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				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS2572 FDS2572NL
OCR Text	... Resistance Junction to Case at 10 seconds Thermal Resistance Junction to Case at steady state (NOTE1) (NOTE2) (NOTE2) 25 50 85 o ...9A, VGS = 10V ID = 4.9A, VGS = 6V 2 0.040 0.044 4 0.047 0.053 V Dynamic Characteristics CISS C...
Description	150V N-Channel UltraFET Trench MOSFET 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET
File Size	271.78K / 12 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp. Advanced Power Electron...
Part No.	AP09N70P-H AP09N70P-H-14
OCR Text	...d(off) turn-off delay time r g =10 , v gs =10v - 56 - ns t f fall time r d =34 -24- ns c iss input capacitance v gs =0v - 2660 - pf c oss o...9a, v gs =0v - - 1.5 v notes: 1.pulse width limited by maximum junction temperature. 2.starting t j ...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Fast Switching Characteristics
File Size	61.02K / 4 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AOD9N52
OCR Text	...20 bv dss / ? tj 0.56 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.3 3.9 4.5 v r ds(on) 0.71 0.86 ...9a, r g =25 w electrical characteristics (t j =25c unless otherwise noted) static parameters paramet...
Description	520V,9A N-Channel MOSFET
File Size	542.45K / 6 Page	View it Online	Download Datasheet

				http:// IRF[International Rectifier]
Part No.	IRF8915PBF
OCR Text	... Notes through are on page 10 www.irf.com 1 8/11/04 IRF8915PbF Static @ TJ = 25C (unless otherwise specified) Parameter BV...9A V VGS = 4.5V, ID = 7.1A VDS = VGS, ID = 250A e e mV/C A VDS = 16V, VGS = 0V nA S VDS = 16V,...
Description	HEXFET Power MOSFET
File Size	185.76K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD SEMICONDUCTOR CORP
Part No.	FSPL230D1 FSPL230F4
OCR Text	.... . . . . . . . . . . . . .p t 10 w linear derating factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...9a pulsed source current (body diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description	9 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
File Size	89.12K / 7 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP02N90P-HF
OCR Text	...urrent v ds =900v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =720v , v gs =0v - - 100 ua i gss gate-source leaka...9a - 12 20 nc q gs gate-source charge v ds =540v - 2.5 - nc q gd gate-drain ("miller") charge v gs =...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	57.77K / 4 Page	View it Online	Download Datasheet

				WEITRON[Weitron Technology]
Part No.	WTD9575
OCR Text	...td(on) tr td(off) tf Qg Qgs Qgd 10 19 46 53 17 5 6 ns 27 nC Source-Drain Diode Characteristics Forward On Voltage2 VGS=0V,IS=-9A Reverse Recovery Time VGS=0V,IS=-9A,dl/dt=100A/s Reverse Recovery Charge VGS=0V,IS=-9A,dl/dt=100A/s Note: ...
Description	Surface Mount P-Channel Enhancement Mode POWER MOSFET
File Size	398.20K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7473PBF IRF7473PBF-15
OCR Text	...ange Soldering Temperature, for 10 seconds HEXFET(R) Power MOSFET VDSS 100V RDS(on) max 26mW@VGS = 10V ID 6.9A S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Max. 6.9 5.5 55 2.5 0.02 2...
Description	Telecom and Data-Com 24 and 48V input DC-DC converters HEXFET Power MOSFET
File Size	123.80K / 8 Page	View it Online	Download Datasheet

				WEITRON[Weitron Technology]
Part No.	WTD9973
OCR Text	...URRENT (A) 40 35 30 25 20 15 10 5 0 0 ID ,Drain Current (A) TC =25C 10V 7.0V 5.0V 4.5V 28 24 20 16 12 8 4 0 0 TC =150C ...9A TC = 25C Normalized RDs(on) 2.0 I D = 9A VG = 10V RDs(on) (m) 80 1.5 75 1.0 ...
Description	Surface Mount N-Channel Enhancement Mode POWER MOSFET
File Size	338.61K / 6 Page	View it Online	Download Datasheet

For 10.9a Found Datasheets File :: 5541 Search Time::1.484ms
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