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POSEICO[Power Semiconductors]
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Part No. |
AT646S22 AT646
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OCR Text |
10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I -
PHASE CONTROL THYRISTOR
AT646
Repetitive voltage up to Mea...5ohm Linear ramp up to 70% of VDRM VD=100V, gate source 25V, 10 ohm , tr=.5 s dV/dt = 20 V/s linear ... |
Description |
PHASE CONTROL THYRISTOR
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File Size |
43.04K /
4 Page |
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it Online |
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Xian Semipower Electronic Technology Co., Ltd.
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Part No. |
SWF3N80A SW3N80A SWD3N80A
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OCR Text |
... (note 1) 10 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p...5ohm 1 2 3 1. gate 2. drain 3. source to - 220f 1 2 3 to - 220 sw3n80a samwi... |
Description |
N-channel MOSFET
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File Size |
909.00K /
7 Page |
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it Online |
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PERICOM SEMICONDUCTOR CORP
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Part No. |
PI3LVD512ZFE
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OCR Text |
10 features ? designed specifcally to switch lvds signals ? v dd = 3.3v +/-10% ? esd tolerance on video i/o p...5ohm, typ) ? low input/output capacitance (con = 6pf, typ) ? packaging (pb-free ... |
Description |
5-CHANNEL, VIDEO MULTIPLEXER, QCC56
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File Size |
709.60K /
9 Page |
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it Online |
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Xian Semipower Electronic Technology Co., Ltd.
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Part No. |
SW830
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OCR Text |
...ua v ds =400v, t c =125 o c - - 10 ua i gss gate to source leakage current, forward v gs =30v, v ds =0v - - 100 na gate to source leakage current, reverse v gs = - 30v, v ds =0v - - - 100 na on characteristics v gs(th) gate threshold voltag... |
Description |
N-channel MOSFET
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File Size |
345.76K /
5 Page |
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it Online |
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Xian Semipower Electronic Technology Co., Ltd. Xian Semipower Electronic T...
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Part No. |
SW8N90
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OCR Text |
...ut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 9 . gate charge test circuit & waveform fig. 10 . switching time test circuit & waveform v ds same type as dut d... |
Description |
N-channel TO-220F MOSFET
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File Size |
361.71K /
5 Page |
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it Online |
Download Datasheet
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