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Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RD06HVF1-101 RD06HVF1
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OCR Text |
...+/- 20 V Tc=25C 27.8 W Zg=Zl=50 0.6 W 3 A C 150 -40 to +150 C C/W junction to case 4.5
Note 1: Above parameters are guaranteed independen...6W(Pin Control) f=175MHz,Idq=0.3A,Zg=50 Load VSWR=20:1(All Phase) LIMITS MIN TYP MAX. 10 1 1.9 4.9 6... |
Description |
MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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File Size |
374.92K /
8 Page |
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Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RD06HHF1
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OCR Text |
0.7 1.3+/-0.4 3.6+/-0.2
Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION
RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE DRAWING
3.2+/-0.4
4.8MAX
9+/-0.4
*High p... |
Description |
Silicon MOSFET Power Transistor 30MHz,6W
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File Size |
197.08K /
7 Page |
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it Online |
Download Datasheet |
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MACOM[Tyco Electronics]
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Part No. |
MRF316
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OCR Text |
...O VEBO IC PD Tstg Value 35 65 4.0 9.0 13.5 220 1.26 -65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C
MRF316
80 W, 3.0-200 MHz CONTROLLED "...6W 4W
120 Pout , OUTPUT POWER (WATTS) 100 80 60 40
Pin = 8 W 6W 4W
2W
2W
f = 100 MHz ... |
Description |
The RF Line NPN Silicon RF Power Transistor
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File Size |
156.24K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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