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  0.535 Datasheet PDF File

For 0.535 Found Datasheets File :: 7201    Search Time::2.406ms    
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    2SJ484

HITACHI[Hitachi Semiconductor]
Part No. 2SJ484
OCR Text ... * Low on-resistance R DS(on) = 0.18 typ. (at V GS = -10V, ID = -1A) * Low drive current * High speed switching * 4V gate drive devices. ...535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 42.55K  /  9 Page

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    2SJ486

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ486
OCR Text ... * Low on-resistance R DS(on) = 0.5 typ. (at V GS = -4V, ID = -100 mA) * 2.5V gate drive devices. * Small package (MPAK). Outline MPAK ...535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa...
Description RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开
Silicon P Channel MOS FET Low FrequencyPower Switching
Silicon P-Channel MOS FET

File Size 40.30K  /  8 Page

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    2SJ496

HITACHI[Hitachi Semiconductor]
Part No. 2SJ496
OCR Text ... * Low on-resistance R DS(on) = 0.12 typ. (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A O...535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 49.68K  /  10 Page

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    2SJ504

HITACHI[Hitachi Semiconductor]
Part No. 2SJ504
OCR Text ... * Low on-resistance R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220FM D ...535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 50.21K  /  10 Page

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    2SJ506 2SJ506L 2SJ506S

Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ506 2SJ506L 2SJ506S
OCR Text ... * Low on-resistance R DS(on) = 0.065 typ. (at V GS = -10V, ID = -5A) * Low drive current * High speed switching * 4V gate drive devices. ...535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 49.71K  /  10 Page

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    2SJ517

HITACHI[Hitachi Semiconductor]
Part No. 2SJ517
OCR Text ... * Low on-resistance R DS(on) = 0.18 typ. (at V GS =-4V, ID =-1A) * Low drive current * High speed switching * 2.5V gate drive devices. ...535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.79K  /  8 Page

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    2SJ518

HITACHI[Hitachi Semiconductor]
Part No. 2SJ518
OCR Text ... * Low on-resistance R DS(on) = 0.35 typ. at (V GS = -10V, ID = -1A) * Low drive current * 4 V gete drive devices * High speed switching ...535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 46.74K  /  9 Page

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    2SJ526

HITACHI[Hitachi Semiconductor]
Part No. 2SJ526
OCR Text ... * Low on-resistance R DS(on) = 0.11 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline TO-220FM D ...535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.48K  /  9 Page

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    2SJ531

HITACHI[Hitachi Semiconductor]
Part No. 2SJ531
OCR Text ... * Low on-resistance R DS(on) = 0.050 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220CFM ...535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 49.99K  /  9 Page

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    2SJ532

HITACHI[Hitachi Semiconductor]
Part No. 2SJ532
OCR Text ... * Low on-resistance R DS(on) = 0.042 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-220CFM ...535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.69K  /  9 Page

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