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vds-100v Datasheet PDF File

For vds-100v Found Datasheets File :: 4513 Search Time::1.703ms
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				ADPOW[Advanced Power Technology]
Part No.	APT8056BVR
OCR Text	... 800 16 0.56 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...100V VDS=250V 12 VDS=400V 8 TJ =+150C 10 5 TJ =+25C 4 50 100 150 200 250 300 350 Qg, ...
Description	POWER MOS V 800V 16A 0.560 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.19K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8058HVR
OCR Text	...0 13.5 0.580 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...100V VDS=250V 12 VDS=400V 8 TJ =+150C 10 5 TJ =+25C 4 50 100 150 200 250 300 350 Qg, ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 13.5A 0.580 Ohm
File Size	60.35K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065BVFR APT10M11B2VR APT20M22B2VR APT8065
OCR Text	...00 13 0.65 250 1000 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...100V VDS=250V 10 5 TJ =+150C TJ =+25C 12 VDS=400V 8 1 .5 4 50 100 150 200...
Description	POWER MOS V 800V 13A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.14K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065BVR APT8065 APT8065AVR
OCR Text	... 800 13 0.65 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...100V VDS=250V 10 5 TJ =+150C TJ =+25C 12 VDS=400V 8 1 .5 4 50 100 150 200...
Description	POWER MOS V 800V 13A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.69K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065SVR
OCR Text	... 800 13 0.65 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...100V VDS=250V 10 5 TJ =+150C TJ =+25C 12 VDS=400V 8 1 .5 4 50 100 150 200...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 800V 13A 0.650 Ohm
File Size	63.31K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065 APT8065AVR
OCR Text	...0 11.5 0.650 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...100V VDS=250V 10 5 TJ =+150C TJ =+25C 12 VDS=400V 8 1 .5 4 50 100 150 200...
Description	POWER MOS V 800V 11.5A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.68K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8067HVR
OCR Text	...0 11.5 0.670 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...100V VDS=250V 12 VDS=400V 16 10 5 TJ =+150C TJ =+25C 8 1 .5 4 50 100 150 200...
Description	POWER MOS V 800V 11.5A 0.670 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.92K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8075BVFR
OCR Text	...00 12 0.75 250 1000 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...100V VDS=250V TJ =+150C 10 5 TJ =+25C 12 VDS=400V 8 1 .5 4 50 100 150 200 250 Qg, ...
Description	POWER MOS V 800V 12A 0.750 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	69.90K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology]
Part No.	APT8075BVR APT8075
OCR Text	... 800 12 0.75 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...100V VDS=250V TJ =+150C 10 5 TJ =+25C 12 VDS=400V 8 1 .5 4 50 100 150 200 250 Qg, ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 12A 0.750 Ohm
File Size	61.94K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQA65N20
OCR Text	...A ID = 250 A, Referenced to 25C VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 200 ------0.15 --...100V VDS = 160V 10000 Ciss VGS, Gate-Source Voltage [V] 8 Capacitance [pF] 8000 ...
Description	200V N-Channel MOSFET
File Size	621.78K / 8 Page	View it Online	Download Datasheet

For vds-100v Found Datasheets File :: 4513 Search Time::1.703ms
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