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  tral Datasheet PDF File

For tral Found Datasheets File :: 858    Search Time::2ms    
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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM48C8104B KM48C8004B KM48C8004BK-6 KM48C8004BS-6 KM48C8104BK-5 KM48C8104BS-6 KM48C8104BS-5
OCR Text ...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS 74 101 KM48C8004B, KM48C8104B AC CHARACTERISTICS (Continued) Parameter Data hold time Refresh period (4K, Normal) Refresh period (8K, Normal) Write command s...
Description 8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns

File Size 382.88K  /  21 Page

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    K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-TL50 K4F661612C-TC K4F661612C K4F661612C-L K4F641612C-TL60 K4F661612C-T

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-TL50 K4F661612C-TC K4F661612C K4F661612C-L K4F641612C-TL60 K4F661612C-TL60 K4F641612C-TL45 K4F661612C-TL45 K4F661612C-TL50
OCR Text ...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH 80 115 K4F661612C, K4F641612C AC CHARACTERISTICS (Continued) Parameter Refresh period (Normal) Refresh period (L-ver) Write command set-up time CAS to W ...
Description 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power

File Size 842.92K  /  35 Page

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    K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-TC50 K4F661612B-TC K4F661612B K4F661612B-L K4F641612B-TL60 K4F661612B-T

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-TC50 K4F661612B-TC K4F661612B K4F661612B-L K4F641612B-TL60 K4F661612B-TL60 K4F641612B-TL45 K4F661612B-TL45 K4F641612B-TL50 K4F661612B-TL50
OCR Text ...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL tDS tDH 80 115 K4F661612B,K4F641612B AC CHARACTERISTICS (Continued) Parameter Refresh period (Normal) Refresh period (L-ver) Write command set-up time CAS to W d...
Description 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power

File Size 842.61K  /  35 Page

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    OKI[OKI electronic componets]
Part No. MD51V64400-60 MD51V64400 MD51V64400-50
OCR Text ...P tRCD tRAD tASR tRAH tASC tCAH tral tRCS tRCH tRRH 90 131 35 76 -- -- -- -- -- 0 0 0 3 -- 30 50 50 13 13 7 13 50 5 30 17 12 0 7 0 7 25 0 0 0 -- -- -- 10,000 -- -- -- 37 25 -- -- -- -- -- -- -- -- -- -- -- 10,000 -- -- -- 45 30 -- ...
Description 16,777,216-Word X 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

File Size 429.97K  /  15 Page

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    THM72V2010AG THM72V2010AG-60 THM72V2010AG-70

Toshiba Semiconductor
Part No. THM72V2010AG THM72V2010AG-60 THM72V2010AG-70
OCR Text ...AD tCRP tCP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH PARAMETER Random Read or Write Cycle Time Read-Modify-Write Cycle Time Fast Page Mode Cycle Time Fast Page Mode Read-Modify-Write Cycle Time Access Time from RAS Access Time from CAS ...
Description 2,097,152 WORDS X 72 BIT DYNAMIC RAM MODULE

File Size 1,848.05K  /  30 Page

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    AS4C4M4DG-7_IT AS4C4M4DG-7_XT AS4C4M4DG-6_IT AS4C4M4DG-6_XT AS4C4M4 AS4C4M4DG-6/IT AS4C4M4DG-6/XT AS4C4M4DG-7/IT AS4C4M4

Austin Semiconductor
Part No. AS4C4M4DG-7_IT AS4C4M4DG-7_XT AS4C4M4DG-6_IT AS4C4M4DG-6_XT AS4C4M4 AS4C4M4DG-6/IT AS4C4M4DG-6/XT AS4C4M4DG-7/IT AS4C4M4DG-7/XT
OCR Text ...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL PARAMETER Random read or write cycle time Read-modify-write cycle time Access time from RAS\ Access time from CAS\ Access time from column address CAS\ to output in Low-...
Description 4M x 4 CMOS DRAM WITH FAST PAGE MODE, 5 VOLT

File Size 2,644.27K  /  19 Page

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    AS4LC4M4DG-6_IT AS4LC4M4DG-6_XT AS4LC4M4 AS4LC4M4DG-7/XT AS4LC4M4DG-7/IT AS4LC4M4DG-6/IT AS4LC4M4DG-6/XT

Austin Semiconductor
Part No. AS4LC4M4DG-6_IT AS4LC4M4DG-6_XT AS4LC4M4 AS4LC4M4DG-7/XT AS4LC4M4DG-7/IT AS4LC4M4DG-6/IT AS4LC4M4DG-6/XT
OCR Text ...D tRAD tCRP tASR tRAH tASC tCAH tral tRCS tRCH tRRH tWCH tWP tRWL tCWL AS4LC4M4 Rev. 0.3 7/06 -70 MAX MIN MAX UNITS ns ns 60 15 30 ns ns ns ns 15 50 ns ns ns 10K ns ns ns 10K 45 30 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Austin...
Description 4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V

File Size 2,602.79K  /  19 Page

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    M53230224CE2

Samsung Semiconductor
Part No. M53230224CE2
OCR Text ...0 tASR 10 tRAH 0 tASC 8 tCAH 25 tral 0 tRCS 0 tRCH 0 tRRH 10 tWCH 10 tWP 13 tRWL 13 tCWL 0 tDS 8 tDH 16 tREF 0 tWCS 5 tCSR 10 tCHR 5 tRPC 30 tCPA DataShee DataSheet4U.com -4- Rev. 0.0 (Oct. 1999) DataSheet 4 U .com www.Da...
Description (M53230224CE2/CJ2) DRAM Module

File Size 455.93K  /  15 Page

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    RTC62421 RTC-62423 RTC-62421 RTC62423

EPSON[Epson Company]
Part No. RTC62421 RTC-62423 RTC-62421 RTC62423
OCR Text ...tCIH tAS tAH tAW tALW tALR tWAL tral tWW tRD tDR tDS tDH tRCV -- CL=150pF 0 100 10 60 -- -- 1000 25 25 40 10 10 20 10 120 120 45 ns -- tCDR CS1 hold time Address setup time Address hold time ALE pulse width ALE before WRITE ALE before...
Description 4-bit REAL TIME CLOCK MODULE

File Size 72.49K  /  2 Page

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    M53230400CB0 M53230400CW0 M53230410CW0

Samsung Semiconductor
Part No. M53230400CB0 M53230400CW0 M53230410CW0
OCR Text ...0 tASR 10 tRAH 0 tASC 8 tCAH 25 tral 0 tRCS 0 tRCH 0 tRRH 10 tWCH 10 tWP 13 tRWL 8 tCWL 0 tDS 8 tDH 64 tREF 32 tREF 0 tWCS 5 tCSR 10 tCHR 5 tRPC DataShee DataSheet4U.com DataSheet4 U .com www.DataSheet4U.com DRAM MODULE AC ...
Description (M532304x0CB0/CW0) DRAM Module

File Size 424.66K  /  15 Page

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