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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
RFP12N06RLE RFP12N06 RFD12N06RLESM RFD12N06RLE
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| OCR Text |
...T Power MOSFET Packaging
JEDEC to-251aa
DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE
Features
JEDEC TO-252AA
DRAIN (FLANGE)
* Ultra Low On-Resistance - rDS(ON) = 0.063, VGS = 10V - rDS(ON) = 0.071, VGS = 5V * Simulation Models - T... |
| Description |
17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 18 A, 60 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET
17A 60V 0.071 Ohm N-Channel Logic Level UltraFET Power MOSFET
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| File Size |
212.88K /
10 Page |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
U2703 IRLR_U2703 IRLR2703 IRLU2703 IRLR/U2703 IRLU2703PBF IRLR2703PBF
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| OCR Text |
... advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switchin...251AA
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS ... |
| Description |
POWER MOSFET
POWER MOSFET 功率MOSFET
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
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| File Size |
170.49K /
10 Page |
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http://
INTERSIL[Intersil Corporation]
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| Part No. |
HGTD8P50G1S HGTD8P50G1 HGTP8P50G1
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| OCR Text |
to-251aa
EMITTER COLLECTOR GATE
Features
* 8A, 500V * 3.7V VCE(SAT) * Typical Fall Time - 1800ns * High Input Impedance * TJ = +150oC
(FLANGE) COLLECTOR
Description
The HGTD8P50G1 and the HGTD8P50G1S are P-channel enhancement-mo... |
| Description |
8A, 500V P-Channel IGBTs
8A 500V P-Channel IGBTs
Mechanism, 2-inch w/front paper feed and partial cutter
8A/ 500V P-Channel IGBTs
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| File Size |
109.50K /
9 Page |
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it Online |
Download Datasheet |
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FAIRCHILD
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| Part No. |
MD8087-2_B
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| OCR Text |
...converters and allows operation to higher switching frequencies.
Features
* Fast switching * rDS(ON) = 0.010 (Typ), VGS = 10V * rDS(ON) ...251AA) GDS
S
MOSFET Maximum Ratings TA = 25C unless otherwise noted
Symbol VDSS VGS Parameter... |
| Description |
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
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| File Size |
213.06K /
11 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
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| Part No. |
ISL9N308AD3 ISL9N308AD3ST ISL9N308AD3STNL
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| OCR Text |
...converters and allows operation to higher switching frequencies.
Features
* Fast switching * rDS(ON) = 0.0064 (Typ), VGS = 10V * rDS(ON)...251AA) GDS
S
MOSFET Maximum Ratings TC = 25C unless otherwise noted
Symbol VDSS VGS Parameter... |
| Description |
N-Channel Logic Level UltraFET R Trench Power MOSFETs 30V, 50A, 8mOhm
N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mз 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mз 50 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, to-251aa
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| File Size |
210.96K /
11 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
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| Part No. |
ISL9N312AD3 ISL9N312AD3ST ISL9N312AD3STNL ISL9N312AD3NL
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| OCR Text |
...converters and allows operation to higher switching frequencies.
Features
* Fast switching * rDS(ON) = 0.010 (Typ), VGS = 10V * rDS(ON) ...251AA) GDS
S
MOSFET Maximum Ratings TA = 25C unless otherwise noted
Symbol VDSS VGS Parameter... |
| Description |
N-Channel Logic Level PWM Optimized UltraFET TrenchPower MOSFETs
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
PS MEDICAL SWITCHING 12V 4.7A 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
POWER SUP SWITCHER 41W 24V MED 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, to-251aa
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| File Size |
213.07K /
11 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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