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  rg-59 Datasheet PDF File

For rg-59 Found Datasheets File :: 4053    Search Time::3.703ms    
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    APT8056BVR

ADPOW[Advanced Power Technology]
Part No. APT8056BVR
OCR Text ...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT 3700 370 180 185 16 90 12 10 50 10 4440 515 270 275 24 135 24 20 75 20 ns n...59 (.102) 050-5564 Rev B 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT'...
Description POWER MOS V 800V 16A 0.560 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 61.19K  /  4 Page

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    APT8065BVFR APT10M11B2VR APT20M22B2VR APT8065

ADPOW[Advanced Power Technology]
Part No. APT8065BVFR APT10M11B2VR APT20M22B2VR APT8065
OCR Text ... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT pF 3050 300 150 150 17 70 12 11 60 12 3700 420 225 225 25 105 24 22 90 24 n...59 (.102) 050-5594 Rev B 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT'...
Description POWER MOS V 800V 13A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.14K  /  4 Page

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    APT8065BVR APT8065 APT8065AVR

ADPOW[Advanced Power Technology]
Part No. APT8065BVR APT8065 APT8065AVR
OCR Text ...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT 3050 300 150 150 17 70 12 11 60 12 3700 420 225 225 25 105 24 22 90 24 ns n...59 (.102) 050-5571 Rev B 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT'...
Description POWER MOS V 800V 13A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.69K  /  4 Page

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    APT8075BVFR

ADPOW[Advanced Power Technology]
Part No. APT8075BVFR
OCR Text ... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT pF 2600 270 135 130 13 66 12 11 45 8 3120 380 200 195 20 100 24 22 70 16 ns...59 (.102) 050-5632 Rev - 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT'...
Description POWER MOS V 800V 12A 0.750 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 69.90K  /  4 Page

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    APT8075BVR APT8075

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Part No. APT8075BVR APT8075
OCR Text ...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT 2600 270 135 130 13 66 12 11 45 8 3120 380 200 195 20 100 24 22 70 16 ns nC...59 (.102) 050-5608 Rev B 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT'...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 12A 0.750 Ohm

File Size 61.94K  /  4 Page

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    IRFBA90N20 IRFBA90N20D

IRF[International Rectifier]
Part No. IRFBA90N20 IRFBA90N20D
OCR Text ... VDD = 100V --- ID = 59A ns --- RG = 1.2 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- ...59 65 Units mJ A mJ Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous...
Description Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A??
Power MOSFET(Vdss=200V/ Rds(on)max=0.023ohm/ Id=98A)
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A)
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?)
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?

File Size 97.19K  /  8 Page

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    IRFM224B IRFM224BL99Z

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. IRFM224B IRFM224BL99Z
OCR Text ... 5) VDD = 125 V, ID = 4.1 A, RG = 25 (Note 4, 5) -------- 6.5 35 40 35 13.5 2.0 6.5 25 80 90 80 18 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Dr...
Description 920 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
250V N-Channel MOSFET

File Size 703.34K  /  8 Page

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    IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230

IRF[International Rectifier]
Part No. IRHNJ53230 IRHNJ58230 IRHNJ54230 IRHNJ57230
OCR Text ...VDD = 100V, ID = 13A, VGS =12V, RG = 7.5 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-So...59.4 82.3 Energy (MeV) 309 341 350 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V ...
Description 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

File Size 123.99K  /  8 Page

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    PHD44N06LT PHP44N06LT PHB44N06LT

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PHD44N06LT PHP44N06LT PHB44N06LT
OCR Text ...D = 30 V; ID = 25 A; VGS = 5 V; RG = 10 Resistive load Measured from tab to centre of die Measured from drain lead to centre of die (SOT78 package only) Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz Septe...
Description TrenchMOS transistor Logic level FET 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 80.20K  /  10 Page

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    SML40B27

SemeLAB
Seme LAB
Part No. SML40B27
OCR Text ... Starting TJ = 25C, L = 3.32mH, RG = 25W, Peak IL = 27A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 6/99 SML40B27 STATIC ELECTRICAL RATINGS (T...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 21.14K  /  2 Page

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