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  rg-55 u Datasheet PDF File

For rg-55 u Found Datasheets File :: 11355    Search Time::1.954ms    
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    IRFB17N50LPBF

International Rectifier
Part No. IRFB17N50LPBF
OCR Text ... VDD = 250V --- ID = 16A ns --- RG = 7.5 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- ...55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X ...
Description SMPS MOSFET ( VDSS=500V , RDS(on)typ.=0.28Ω , ID=16A )
SMPS MOSFET ( VDSS=500V , RDS(on)typ.=0.28ヘ , ID=16A )

File Size 169.67K  /  8 Page

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    TC7SZ126AFS

Toshiba Semiconductor
Part No. TC7SZ126AFS
OCR Text ...~10 (v cc = 3.3 v 0.3 v) ?N?rg dt/dv 0~5 (v cc = 5.0 v 0.5 v) ns/v (? 2): ?` g in a out y en tc7sz126afs 2009-09-30 3 ?...55 1.65 ? 1.55 ? 2.3 2.2 2.3 ? 2.2 ? 3.0 2.9 3.0 ? 2.9 ? i oh = ?100 a 4.5 4.4 4.5 ? ...
Description Bus Buffer With 3-STATE Output

File Size 200.11K  /  6 Page

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    IRL3103L IRL3103S IRL3103STRR IRL3103STRL

IRF[International Rectifier]
Part No. IRL3103L IRL3103S IRL3103STRR IRL3103STRL
OCR Text ... --- VDD = 15V --- ID = 34A --- RG = 1.8 --- VGS = 4.5V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and cent...55 ) 6.18 (.2 43 ) 1 5.49 (.6 10) 1 4.73 (.5 80) 5.28 (.2 08 ) 4.78 (.1 88 ) 2.7 9 (.110 ) 2.2 9 (.0...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A)

File Size 123.16K  /  10 Page

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    IRL3103

International Rectifier
Part No. IRL3103
OCR Text ... --- VDD = 15V --- ID = 34A --- RG = 1.8 --- VGS = 4.5V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and cent...55 5) 1 3.47 (.53 0) 4.06 (.16 0) 3.55 (.14 0) 3X 3X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 0.93 (...
Description Power MOSFET(Vdds=30V, Rds(on)=12mohm, Id=64A)

File Size 153.69K  /  8 Page

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    IRL3713 IRL3713L IRL3713S

IRF[International Rectifier]
Part No. IRL3713 IRL3713L IRL3713S
OCR Text ...Computer Processor Power l 100% RG Tested l IRL3713 IRL3713S IRL3713L HEXFET(R) Power MOSFET RDS(on) max (mW) 3.0@VGS = 10V VDSS 3...55 to +175 units V V A c Maximum Power Dissipation Maximum Power Dissipation Linear Derati...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package
SMPS MOSFET

File Size 233.11K  /  11 Page

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    HAT1126R HAT1126R-EL-E HAT1126RJ HAT1126RJ-EL-E

Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. HAT1126R HAT1126R-EL-E HAT1126RJ HAT1126RJ-EL-E
OCR Text ...PW 10 s 4. Value at Tch = 25C, Rg 50 Rev.1.00 Sep. 10, 2004 page 1 of 7 HAT1126R, HAT1126RJ Electrical Characteristics (Ta = 25...55 10 -0.85 30 Max -- -- -1 -- -10 10 -2.5 -- 50 85 -- -- -- -- -- -- -- -- -- -- -1.1 -- unit V V A...
Description Transistors>Switching/MOSFETs
Silicon P Channel Power MOS FET High Speed Power Switching P通道功率MOS FET的高速电源开

File Size 110.76K  /  8 Page

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    FQT5P10 FQT5P10TF

Fairchild Semiconductor
Part No. FQT5P10 FQT5P10TF
OCR Text ...5) VDD = -50 V, ID = -4.5 A, RG = 25 (Note 4, 5) -------- 9 70 12 30 6.3 1.7 3.0 30 150 35 70 8.2 --- ns ns ns ns nC nC nC ...55 Notes : 1. VDS = -40V 2. 250 s Pulse Test Note : 1. 250 s Pulse Test 2. TC = 25 10 -2...
Description 250V N-Channel MOSFET
100V P-Channel QFET

File Size 666.06K  /  8 Page

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    FQT2P25 FQT2P25TF

Fairchild Semiconductor
Part No. FQT2P25 FQT2P25TF
OCR Text ...arge VDD = -125 V, ID = -2.3 A, RG = 25 (Note 4, 5) -------- 8.5 40 12 25 6.5 1.8 3.0 25 90 35 60 8.5 --- ns ns ns ns nC nC nC...55 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS ...
Description 250V P-Channel QFET
250V P-Channel MOSFET

File Size 653.05K  /  8 Page

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For rg-55 u Found Datasheets File :: 11355    Search Time::1.954ms    
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