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MOTOROLA[Motorola, Inc]
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| Part No. |
MTP29N15E
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| OCR Text |
..., PEAK IL = 29 Apk, L = 1.0 mH, RG = 25 W) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Maximum Lead Tem...141, Japan. 81-3-5487-8488
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Motorola TMOS Power MOSFET Transistor MTP29N15E/D Device Data... |
| Description |
TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM
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| File Size |
71.94K /
4 Page |
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ONSEMI[ON Semiconductor]
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| Part No. |
NTP6N50
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| OCR Text |
... 6 A, L = 10 mH, VDS = 500 Vdc, RG = 25 ) Thermal Resistance - Junction-to-Case - Junction-to-Ambient Maximum Lead Temperature for Soldering...141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com ... |
| Description |
Power MOSFET 6 Amps, 500 Volts N-Channel TO-220
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| File Size |
55.53K /
8 Page |
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Motorola Inc
MOTOROLA[Motorola, Inc]
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| Part No. |
PHPM7A10S120DC3 MHPM7A10S120DC3
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| OCR Text |
...= 125C
+15 V MBRS130T3 220 W RG(on) 20 W RG(off) MBRS130T3 MBRS130T3
MC33153
Figure 5. Recommended Gate Drive Circuit
Motorola I...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
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MHPM7A10S120DC3/D Moto... |
| Description |
Hybrid Power Module
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| File Size |
160.85K /
6 Page |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STP3NC70ZFP STP3NC70Z
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| OCR Text |
...itions VDD = 350 V, ID = 1.25 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 560V, ID = 2.5A, VGS = 10V Min. Typ. 14 11 17 4 7 24 M...141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
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| Description |
N-CHANNEL 700V 4.1 OHM 2.5A TO-220/TO-220FP ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 700V - 4.1ohm - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 700V - 4.1ohm - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH?III MOSFET
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| File Size |
322.99K /
10 Page |
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF1350-SCC TGF1350
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| OCR Text |
...DARD DEVIATION
uNIT
rs rd rg gm rds ri Cgs Cgd Cds
So u rce res is t an ce Drain res is t an ce Gat e res is t an ce Tran s co n d u ct an ce Drain -t o -s o u rce res is t an ce In p u t res is t an ce Gat e-t o -s o u rce cap ac... |
| Description |
Discrete MESFET
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| File Size |
465.79K /
5 Page |
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Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM7785-35SL
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| OCR Text |
...-c) Recommended Gate Resistance(Rg): 28 (Max.)
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated ...141.44 61.355 MAG -8.9814 -8.3276 -8.2456 -9.079 -11.201 -15.55 -23.587
S12 ANG -132.94 178.84 13... |
| Description |
MICROWAVE POWER GaAs FET 微波功率GaAs场效应管
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| File Size |
176.25K /
5 Page |
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TACHYONICS[Tachyonics CO,. LTD]
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| Part No. |
TMF3202Z
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| OCR Text |
...-S=4V; ID=100 VG2-S=4V; VDS=5V; RG=62 VG1-S=5V; VG2-S=VDS=0 VG2-S=5V; VG1-S=VDS=0 MIN. 10 6 6 0.5 0.5 0.3 0.3 8 -
TMF3202Z
MAX. 10 10 ...141.5 130.8 120.1 110.1 98.8 87.8
S22 Angle (deg)
93.0 91.7 89 89.2 92.6 95.6 100.4 104.6 110.7
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| Description |
N-Channel Dual-Gate MOSFET
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| File Size |
224.63K /
8 Page |
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Anadigics Inc
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| Part No. |
ACu50752
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| OCR Text |
... down/ * current adjust 0.01 uF RG 5 RF IN 0.01 uF 7 3.3uH 8 6 3 4
16 15 14 100 pF 13 12 9.1 pF 11 10 9 L 0.01 uF 330 uF TAN ISV245 .1 uF...141 Mount Bethel Road Warren, New Jersey 07059, u.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132... |
| Description |
The ACu50752 is a Monolithic GaAs IC designed to perform the upconverter functions in a double conversion tuner: gainblock local ...
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| File Size |
76.36K /
9 Page |
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