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ONSEMI[ON Semiconductor]
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| Part No. |
MGS05N60D_D ON1885 MGS05N60D MGS05N60D-D
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| OCR Text |
...V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25 W (1) Pulse width is limited by maximum junction temperature repetitive rating.
Designer's Data for...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
6
Motorola IGBTMGS05N60D... |
| Description |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
IGBT 0.5 A @ 25 600 V
From old datasheet system
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| File Size |
134.49K /
6 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGY25N120_D ON1934 MGY25N120
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
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| Description |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
From old datasheet system
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| File Size |
149.81K /
5 Page |
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ONSEMI[ON Semiconductor]
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| Part No. |
MMG05N60D_D ON2233 MMG05N60D
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| OCR Text |
...V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25 W (1) Pulse width is limited by maximum junction temperature repetitive rating.
Designer's Data for...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
6
Motorola IGBTMMG05N60D... |
| Description |
Insulated Gate Bipolar Transistor
From old datasheet system
N-hannel Enhancement-ode Silicon Gate
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| File Size |
134.42K /
6 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP20NM60FD STF20NM60D
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| OCR Text |
...ance VGS = 0V, VDS = 0V to 480V RG Qg Qgs Qgd Gate input resistance Total gate charge Gate-source charge Gate-drain charge f=1 MHz Gate DC B...141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
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| Description |
N-CHANNEL POWER MOSFET
N-CHANNEL MOSFET
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| File Size |
348.16K /
15 Page |
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it Online |
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hitachi
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| Part No. |
BB501C
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| OCR Text |
...A VDS = 5V, VG1 = 5V VG2S = 4V, RG = 47k VDS = 5V, VG1 = 5V VG2S =4V RG = 47k, f = 1kHz VDS = 5V, VG1 = 5V VG2S =4V, RG = 47k f = 1MHz VDS =...141.2 137.6 134.2 130.6 127.4 124.3 120.8 117.3 114.3 111.0 108.0 S12 MAG 0.00057 0.00144 0.00211 0.... |
| Description |
From old datasheet system
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| File Size |
82.40K /
13 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
STB20NM50FDT4 STF20NM50D
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| OCR Text |
...(1) Ciss Coss Crss Coss eq. (2) Rg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equi...141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
... |
| Description |
N-CHANNEL 500V 0.22 OHM 20A TO-220/TO-220FP/D2PAK FDMESH POWER MOSFET
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| File Size |
496.04K /
11 Page |
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it Online |
Download Datasheet |
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Price and Availability
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