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  optoisolator w base smd Datasheet PDF File

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    USHA India LTD
Part No. 2SA1625
Description High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75w.

File Size 104.94K  /  2 Page

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    MSEBX855-B MSEBX855-M MSEBX855-S

Advanced Digital Logic, Inc.
Part No. MSEBX855-B MSEBX855-M MSEBX855-S
Description EBX base Board
EBX base Board

File Size 199.77K  /  2 Page

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    STESB01 STESB01DR STESB01STR

STMicroelectronics
Part No. STESB01 STESB01DR STESB01STR
Description ESBT base Driver
ESBT base Driver

File Size 175.42K  /  14 Page

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    ILD251-X006 IL250-X007 IL252-X007 ILD251-X007 IL250-X009 IL251-X009 IL252-X009 ILD250-X009 ILD251-X009 ILD252-X009 ILD25

Vishay Siliconix
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
Vishay Semiconductors
Part No. ILD251-X006 IL250-X007 IL252-X007 ILD251-X007 IL250-X009 IL251-X009 IL252-X009 ILD250-X009 ILD251-X009 ILD252-X009 ILD250 ILD251 IL250 IL252 IL251 ILD252
Description Optocoupler/ Phototransistor Output/ AC Input/ with base Connection
CKTBKR
Optocoupler, Phototransistor Output, AC Input, with base Connection 光耦,光电晶体管输出,AC输入,与基地连接

File Size 174.16K  /  8 Page

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    Alpha Industries Inc
Alpha Industries, Inc.
Part No. AV133-315
Description HIP3??Variable Attenuator for UMTS base Stations
HIP3 Variable Attenuator for UMTS base Stations
HIP3Variable Attenuator for UMTS base Stations

File Size 247.31K  /  3 Page

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    2021-25

GHz Technology
Microsemi, Corp.
Part No. 2021-25
Description 25 w, 24 V, 2000-2130 MHz common base transistor
25 watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common base; fO (MHz): 2100; P(out) (w): 25; P(in) (w): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55Aw-1 S BAND, Si, NPN, RF POwER TRANSISTOR

File Size 23.84K  /  1 Page

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    TPR1000

Microsemi, Corp.
ETC[ETC]
GHZTECH[GHz Technology]
List of Unclassifed Manufacturers
Part No. TPR1000
Description Transponder/ 1090 MHz, Class C, Common base, Pulsed; P(out) (w): 1000; P(in) (w): 250; Gain (dB): 6; Vcc (V): 50; Pulse width (&#181;sec): 10; Duty Cycle (%): 1; Case Style: 55KV-1 L BAND, Si, NPN, RF POwER TRANSISTOR
1000 watts, 45 Volts, Pulsed Avionics 1090 MHz
high power COMMON base bipolar transistor.

File Size 68.02K  /  2 Page

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    IRFK6J054 IRFK6H054

IRF[International Rectifier]
Part No. IRFK6J054 IRFK6H054
Description 350 A, 60 V, 0.003 ohm, 6 CHANNEL, N-CHANNEL, Si, POwER, MOSFET, TO-240AA
ISOLATED base POwER HEX-PAK ASSEMBLY PARALLEL CHIP
Lsolated base Power HEX-pak Assembly Half Bridge Configuration
60V SINGLE HEXFET Power MOSFET in a TO-240AA package

File Size 55.86K  /  2 Page

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    SKY12145-315

Skyworks Solutions Inc.
Part No. SKY12145-315
Description HIP3 Variable Attenuator for UMTS base Stations
HIP3⑩ Variable Attenuator for UMTS base Stations

File Size 110.96K  /  4 Page

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    ALPHA[Alpha Industries]
Part No. AV133-315
Description HIP3⑩ Variable Attenuator for UMTS base Stations
HIP3 Variable Attenuator for UMTS base Stations

File Size 243.46K  /  3 Page

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