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For l-mos Found Datasheets File :: 21618 Search Time::1.11ms
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				FUJI ELECTRIC HOLDINGS CO., LTD.
Part No.	2SK2002-01MR
OCR Text	... VCC=300V ID=3A VGS=10V RGS=10 L=100H Tch=25C Min. 600 2,5 Typ. 3,0 10 0,2 10 4 3 600 50 10 15 10 40 10 Max. 3,5 500 1,0 100 4,5 9...MOS-FET 600V 4,5 2SK2002-01MR FAP-IIA Series Drain-Source-On-State Resistance vs. Tch Typic...
Description	N-channel MOS-FET
File Size	211.39K / 2 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2003-01MR
OCR Text	... VCC=300V ID=4A VGS=10V RGS=10 L=100H Tch=25C Min. 600 2,5 Typ. 3,0 10 0,2 10 2 4 1000 85 20 20 15 45 15 Max. 3,5 500 1,0 100 2,4 ...MOS-FET 600V 2,4 2SK2003-01MR FAP-IIA Series Drain-Source-On-State Resistance vs. Tch Typic...
Description	N-channel MOS-FET
File Size	200.13K / 2 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2004-01L 2SK2004-01S
OCR Text	...V ID=4A VGS=10V RGS=10 Tch=25C L = 100H Min. 1000 2,5 Typ. 3,0 10 0,2 10 2,7 5 1300 100 35 20 15 85 20 Max. 3,5 500 1,0 100 3,6 19...MOS-FET 1000V 3,6 2SK2004-01L,S FAP-IIA Series Drain-Source-On-State Resistance vs. Tch Typ...
Description	N-channel MOS-FET
File Size	218.14K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SK2008
OCR Text	...c ch-c = 2.08C/W, TC = 25C PDM l t Pu Sho se 0.03 0.01 10 0.02 0.01 1 T 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 100 10 4 Unit: mm 5.0 0.3 15.6 0.3 3.2 + 0.4 - 0.2 5.5 0.3 2.7 1.0 0.2...
Description	Silicon N Channel MOS FET Silicon N-Channel MOS FET
File Size	32.77K / 6 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SK2383
OCR Text	...ture * TC = 25C Ta = 25C L = 2mH, IL = 13A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off cur...MOS FETs Area of safe operation (ASO) 100 IDP 120 2SK2383 PD Ta Allowable power dissipation ...
Description	Silicon N-Channel Power F-MOS FET
File Size	42.68K / 3 Page	View it Online	Download Datasheet

				Panasonic, Corp. Panasonic Semiconductor
Part No.	2SK3022
OCR Text	...nal Connection W C C S G D L = 0.1mH, IL = 5A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain ...
Description	Silicon N-Channel Power F-MOS FET 5000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
File Size	23.26K / 1 Page	View it Online	Download Datasheet

				Panasonic Semiconductor
Part No.	2SK3023
OCR Text	...nal Connection W C C S G D L = 0.1mH, IL = 10A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain...
Description	Silicon N-Channel Power F-MOS FET
File Size	23.25K / 1 Page	View it Online	Download Datasheet

				Panasonic Corporation PANASONIC[Panasonic Semiconductor]
Part No.	2SK3024 2SK3024TENTATIVE
OCR Text	...nal Connection W C C S G D L = 0.1mH, IL = 20A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain...
Description	Silicon N-Channel Power F-MOS FET
File Size	23.22K / 1 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor] Panasonic Corporation
Part No.	2SK3025 2SK3025TENTATIVE
OCR Text	...nal Connection W C C S G D L = 0.1mH, IL = 30A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain...
Description	Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset Silicon N-Channel Power F-MOS FET Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
File Size	23.15K / 1 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SK3026
OCR Text	...nal Connection W C C S G D L = 0.1mH, IL = 40A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain...
Description	Silicon N-Channel Power F-MOS FET
File Size	23.46K / 1 Page	View it Online	Download Datasheet

For l-mos Found Datasheets File :: 21618 Search Time::1.11ms
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