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				International Rectifier
Part No.	IRF3205LPBF
OCR Text	...MHz, See Fig. 5 --- 1050 264 mJ ias = 62A, L = 138H D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forwar...
Description	Power MOSFET
File Size	298.04K / 10 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SIHFP450LC-E3
OCR Text	...J = 25 C, L = 7.0 mH, RG = 25 , ias = 14 A (see fig. 12). c. ISD 14 A, dI/dt 130 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91231 S-81271-Rev. ...
Description	Power MOSFET
File Size	1,543.38K / 8 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	IRF530 IRF530PBF
OCR Text	...TJ = 25 C, L = 528 H, RG = 25 , ias = 14 A (see fig. 12). c. ISD 14 A, dI/dt 140 A/s, VDD VDS, TJ 175 C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91019 S-81240-Rev. ...
Description	Power MOSFET
File Size	605.90K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	IRF730
OCR Text	...IT mJ Unclamped inductive load, ias = 4.8 A; tp = 0.23 ms; Tj prior to avalanche = 25C; VDD 50 V; RGS = 50 ; VGS = 10 V; refer to fig:17 Repetitive avalanche energy1 IAR = 7.2 A; tp = 2.5 s; Tj prior to avalanche = 25C; RGS = 50 ; VGS = 10...
Description	PowerMOS transistor Avalanche energy rated
File Size	55.04K / 7 Page	View it Online	Download Datasheet

				Power-One
Part No.	EWS0505 EWS0512
OCR Text	...LS, QBS, QES, QLS XWS, XWD, XWT ias, LES IAD, ias, LES, SMS ias, LES SMS Encapsulated EWS, IWS, OWS Standard Pin Length is 0.180" (4.6mm) 8 9 1H 1V 2H 2V 3H 3V All Units (Except SMS) All Units (Except SMS) All Units (Except DIP, HLS, HLD, Q...
Description	EWS SERIES 5 WATT
File Size	274.10K / 3 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PHP18NQ20T
OCR Text	...TIONS Unclamped inductive load, ias = 14 A; tp = 100 s; Tj prior to avalanche = 25C; VDD 25 V; RGS = 50 ; VGS = 10 V; refer to fig;15 MIN. - MAX. 180 UNIT mJ E Non-repetitive avalanche energy Peak non-repetitive avalanche cu...
Description	N-channel TrenchMOS transistor
File Size	129.85K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDS3672
OCR Text	...se Noted 30 If R = 0 tAV = (L)(ias)/(1.3RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(iasR)/(1.3*RATED BVDSS - VDD) +1] ID, DRAIN CURRENT (A) 10 STARTING TJ = 25oC 20 30 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 15V TJ = 25oC ias, ...
Description	100V, 0.022 Ohms, 7.5A, N-Channel UltraFET ?Trench MOSFET
File Size	239.93K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1010N IRF1010NPBF
OCR Text	...= 1.0MHz, See Fig. 5 1030250 mJ ias = 4.3A, L = 270H Typ. --- 0.058 --- --- --- --- --- --- --- --- --- --- 13 76 39 48 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Notes: Parameter Continuous Sour...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=55V/ Rds(on)=11mohm/ Id=85A) Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?
File Size	210.84K / 8 Page	View it Online	Download Datasheet

For ias Found Datasheets File :: 8522 Search Time::1.265ms
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