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  iar Datasheet PDF File

For iar Found Datasheets File :: 9804    Search Time::1.297ms    
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    2SK3569

TOSHIBA[Toshiba Semiconductor]
Part No. 2SK3569
OCR Text ...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 600 600 30 10 40 45 363 10 4.5 150 -55~150 A W mJ A mJ C C 1: Gate 2: Drain 3: Source Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single pulse ava...
Description MOSFET 2SK/2SJ Series
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

File Size 151.31K  /  7 Page

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    TPCF8402

Toshiba Semiconductor
Part No. TPCF8402
OCR Text ...PD (1) PD (2) PD (1) PD (2) EAS iar EAR Tch Tstg -30 -30 20 -3.2 -12.8 1.35 1.12 0.53 0.33 0.67 -1.6 0.11 150 -55~150 Rating 30 30 20 4.0 16.0 1.35 1.12 W 0.53 0.33 2.6 2.0 mJ A mJ C C Unit V V V A JEDEC JEITA TOSHIBA 2-3U1B Weig...
Description TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)

File Size 264.03K  /  11 Page

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    2SK3310

TOSHIBA[Toshiba Semiconductor]
Part No. 2SK3310
OCR Text ...ol VDSS VDGR VGSS ID IDP PD EAR iar EAR Tch Tstg Rating 450 450 30 10 40 40 222 10 4 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche ...
Description Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV)

File Size 222.33K  /  6 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. 2SK2613
OCR Text ...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 1000 1000 30 8 24 150 910 8 15 150 -55~150 Unit V V V A W mJ A mJ C C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURSE Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2...
Description Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII)

File Size 220.85K  /  6 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. 2SK3085
OCR Text ...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 600 600 30 3.5 14 75 227 3.5 7.5 150 -55~150 Unit V V V A W mJ A mJ C C Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalan...
Description Chopper Regulator, DC-DC Converter and Motor Drive Applications

File Size 203.35K  /  6 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. 2SK3417
OCR Text ...ol VDSS VDGR VGSS ID IDP PD EAR iar EAR Tch Tstg Rating 500 500 30 5 20 50 180 5 5 150 -55~150 Unit V V V A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repet...
Description Switching Regulator Applications

File Size 249.60K  /  7 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. 2SK3797
OCR Text ...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 600 600 30 13 52 50 1033 13 5.0 150 -55~150 A W mJ A mJ C C 1: Gate 2: Drain 3: Source Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single pulse av...
Description Silicon N-Channel MOS Type

File Size 216.89K  /  6 Page

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    IRF730

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. IRF730
OCR Text ...17 Repetitive avalanche energy1 iar = 7.2 A; tp = 2.5 s; Tj prior to avalanche = 25C; RGS = 50 ; VGS = 10 V; refer to fig:18 Repetitive and non-repetitive avalanche current EAR IAS, iar - 9.4 7.2 mJ A 1 pulse width and repeti...
Description PowerMOS transistor Avalanche energy rated

File Size 55.04K  /  7 Page

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    IRFP460

NXP Semiconductors
Philips Semiconductors
Part No. IRFP460
OCR Text ...) SYMBOL PARAMETER EAS EAR IAS, iar Non-repetitive avalanche energy CONDITIONS MIN. MAX. 1300 32 20 UNIT mJ mJ A Unclamped inductive load, IAS = 20 A; tp = 0.2 ms; Tj prior to avalanche = 25C; VDD 50 V; RGS = 50 ; VGS = 10 V Repetitive ava...
Description PowerMOS transistors Avalanche energy rated

File Size 89.75K  /  7 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. 2SK3798
OCR Text ...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 900 900 30 4 12 40 345 4 4.0 150 -55~150 A W mJ A mJ C C 1: Gate 2: Drain 3: Source Unit V V V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single pulse avala...
Description Silicon N Channel MOS Type Switching Regulator Applications

File Size 219.08K  /  6 Page

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