|
|
 |

Toshiba Semiconductor
|
Part No. |
TPCF8402
|
OCR Text |
...During dual operation, power is evenly applied to both devices.). Note 4: P Channel: VDD = -24 V, Tch = 25C (initial), L = 0.2 mH, RG = 25 , IAR = -1.6 A N Channel: VDD = 24 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = 2.0 A Note 5: ... |
Description |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
File Size |
264.03K /
11 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Maxim
|
Part No. |
MAX9994EVKIT
|
OCR Text |
...EP. The MAX9994EV kit uses nine evenly spaced, 0.016in-diameter, plated through holes to connect the EP to the lower ground planes. Depending on the ground-plane spacing, large surface-mount pads in the IF path may need to have the ground p... |
Description |
Evaluation Kit for the MAX9994 From old datasheet system
|
File Size |
256.85K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Maxim
|
Part No. |
MAX9996EVKIT
|
OCR Text |
...EP. The MAX9996EV kit uses nine evenly spaced, 0.016in-diameter, plated through holes to connect the EP to the lower ground planes. Depending on the ground-plane spacing, large surface-mount pads in the IF path may need to have the ground p... |
Description |
Evaluation Kit for the MAX9996 From old datasheet system
|
File Size |
199.20K /
8 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|