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IRF[International Rectifier]
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Part No. |
IRHNA8064 IRHNA7064
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OCR Text |
...tron and heavy ion Single Event Effects (SEE) environments. Single Event Effects characterization is shown in Table 3.
Table 1. Low Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD Drain-to-Source Breakdown Voltage Gate ... |
Description |
TRANSISTOR N-CHANNEL
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File Size |
81.43K /
4 Page |
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IRF[International Rectifier]
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Part No. |
IRHNA58064 IRHNA53064 IRHNA54064 IRHNA57064
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OCR Text |
... characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and m... |
Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
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File Size |
177.71K /
8 Page |
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it Online |
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