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意法半导
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| Part No. |
VN800PT
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| OCR Text |
...n 2 (see below). solution 2: a diode (d gnd ) in the ground line. a resistor (r gnd =1k w) should be inserted in parallel to d gnd if the...24v rl=10mohm
11/22 vn800s(8961) / vn800pt(8961) 1 input hysteresis voltage input low level input ... |
| Description |
HIGH SIDE DRIVER
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| File Size |
365.30K /
22 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BUK661R6-30C
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| OCR Text |
...perature -55 175 c source-drain diode i s source current t mb =25c [3] - 120 a i sm peak source current t p 10 s; pulsed; t mb = 25 c - 131...24v; v gs =10v; see figure 12 ; see figure 13 - 229 - nc i d =25a; v ds =24v; v gs =5v; see figur... |
| Description |
N-channel TrenchMOS intermediate level FET 120 A, 30 V, 0.0033 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
168.02K /
15 Page |
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it Online |
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Price and Availability
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