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Samsung Electronic
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| Part No. |
K7B203625A
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| OCR Text |
... rev 3.0 december 1998 we c we d fast access times parameter symbol -75 -80 -90 unit cycle time t cyc 8.5 10 12 ns clock access time t cd 7...cache ram applications. write cycles are internally self-timed and synchronous. the self-timed writ... |
| Description |
64K x 36-Bit Synchronous Burst SRAM Rev. 3.0 (Dec. 1999)
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| File Size |
436.60K /
16 Page |
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Samsung Electronic
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| Part No. |
K7B201825A
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| OCR Text |
...c . n . c . w e b w e a c s 2 v d d v s s c l k g w b w o e a d s c a d s p a d v a 8 8 1 a 9 5 0 4 9 4 8 4 7 4 6 4 5 4 4 4 3 4 2 4 1 4 0 3 ...cache upgrades from 128k depth to 256k depth without extra logic. data address clk ads microprocesso... |
| Description |
128K x 18-Bit Synchronous Burst SRAM Data Sheet
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| File Size |
434.95K /
16 Page |
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it Online |
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Atmel
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| Part No. |
TSPC860
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| OCR Text |
...ge: -55 c < t c < +125 c ? p d = 0.75 w typical at 66 mhz description the tspc860 powerpc quad integrated communication controller (pow...cache i-mmu scc1 scc2 scc3 scc4 smc1 smc2 spi twi time slot assigner serial interface parallel i/o 1... |
| Description |
32-bit Integrated PowerQUICC Communications Controller, 66-80 MHz
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| File Size |
1,918.61K /
90 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KFW4G16Q2M KFW4G16Q2M-DED6 KFG1G16Q2M-DEB6
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| OCR Text |
.... electrical specifications an d timing waveforms are in sections 4.0 though 6.0. section 7.0 provides additional appl ication and techni...cache read flow chart 3. revised standby current 4. revised spare area description 5. added ce don?... |
| Description |
FLASH MEMORY(66MHz)
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| File Size |
1,620.51K /
125 Page |
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it Online |
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