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UMH2N ADDR22 KNP2WS CPC1988J 13003A LBN08017 156M0 13003A
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  avalanche-rated Datasheet PDF File

For avalanche-rated Found Datasheets File :: 13933    Search Time::3.203ms    
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    FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. HUFA75842S3S HUFA75842P3 HUFA75842S3ST
OCR Text ... . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....RATED TC = 25oC (Continued) 300 ID, DRAIN CURRENT (A) 100 If R = 0 tAV = (L)(IAS)/(1.3*...
Description 43A, 150V, 0.042 Ohm, N-Channel, UltraFETPower MOSFET
43A 150V 0.042 Ohm N-Channel UltraFET Power MOSFET
43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET 43 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET 43 A, 150 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 195.17K  /  10 Page

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    IRF140

HARRIS SEMICONDUCTOR
Intersil Corporation
Part No. IRF140
OCR Text ...evel of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regu...Rated * SOA is Power-Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteris...
Description 28A, 100V, 0.077 Ohm, N-Channel Power MOSFET
28A/ 100V/ 0.077 Ohm/ N-Channel Power MOSFET

File Size 55.34K  /  7 Page

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    PHU2N50E

Philips Semiconductors
NXP Semiconductors
Part No. PHU2N50E
OCR Text Avalanche energy rated FEATURES * Repetitive Avalanche Rated * Fast switching * Stable off-state characteristics * High thermal cycling performance * Low thermal resistance * Extremely high dV/dt capability PHU2N50E QUICK REFERENCE ...
Description PowerMOS transistors Avalanche energy rated

File Size 59.61K  /  9 Page

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    ON Semi
Part No. MTY20N50E_D ON2714
OCR Text ...to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed switching applications in power suppl...rated peak current (IDM) nor rated voltage (VDSS) is exceeded and the transition time (tr,tf) do not...
Description TMOS POWER FET 20 AMPERES 500 VOLTS
From old datasheet system

File Size 211.66K  /  8 Page

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    PHW14N50E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHW14N50E
OCR Text Avalanche energy rated FEATURES * Repetitive Avalanche Rated * Fast switching * Stable off-state characteristics * High thermal cycling performance * Low thermal resistance PHW14N50E SYMBOL d QUICK REFERENCE DATA VDSS = 500 V g...
Description PowerMOS transistors Avalanche energy rated

File Size 80.54K  /  7 Page

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    Vishay
Part No. AGP15-400 AGP15-600 AGP15-800
OCR Text Avalanche Rectifiers DO-204AC (DO-15) 1.0 (25.4) min. (R) 0.034 (0.86) 0.028 (0.71) Dia. Features Reverse Voltage 400 to 800V Fo...rated load (JEDEC Method) Maximum full load reverse current, full cycle average 0.375" (9.5mm) lead ...
Description Diodes

File Size 35.11K  /  3 Page

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    FDP3682 FDB3682 FDP3682NL

Fairchild Semiconductor
Part No. FDP3682 FDB3682 FDP3682NL
OCR Text ...d E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 32 23 6 Figu...RATED TC = 25 oC 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 200 1 0.001 0.01 0.1 1 tAV, TIME IN A...
Description N-Channel PowerTrench MOSFET 100V/ 32A/ 36m
N-Channel PowerTrench MOSFET 100V, 32A, 36mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 32A, 0.036 ohm @ Vgs = 10V, TO-220 Package

File Size 216.60K  /  11 Page

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    FDP3672 FDP3672NL

Fairchild Semiconductor, Corp.
Part No. FDP3672 FDP3672NL
OCR Text ...d E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 41 31 5.9 Fi...RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] ID, DRAIN CURRENT (A...
Description N-Channel PowerTrench MOSFET, 105V, 41A, 0.033 Ohms @ VGS = 10V, TO-220 Package 5.9 A, 105 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel PowerTrench MOSFET 105V, 41A, 33mз 5.9 A, 105 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 176.08K  /  10 Page

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    FDP3652 FDI3652 FDB3652

Fairchild Semiconductor
Part No. FDP3652 FDI3652 FDB3652
OCR Text ...d E AS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 61 43 9 Figu...RATED TC = 25oC 0.1 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 200 10ms DC 1 0.01 0.1 1 tAV, TIME IN ...
Description N-Channel PowerTrench MOSFET 100V/ 61A/ 16m
N-Channel PowerTrench MOSFET 100V, 61A, 16mз

File Size 208.05K  /  11 Page

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For avalanche-rated Found Datasheets File :: 13933    Search Time::3.203ms    
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