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  9ns Datasheet PDF File

For 9ns Found Datasheets File :: 792    Search Time::6.36ms    
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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M30620FCNGP M30620FCNFP M30620MCN M30620MCN-XXXFP M30620MCN-XXXGP M30622MGN-XXXFP M30624FGNFP M30624FGNGP M30624MGN-XXXGP M30622MGN-XXXGP M30624MGN-XXXFP
OCR Text ...N)=16MHZ, VCC=3.0V to 3.6V) 142.9ns (f(XIN)=7MHZ, VCC=2.4V to 3.6V without software wait) * Supply voltage ..................................... 3.0V to 3.6V (f(XIN)=16MHZ, without software wait) 2.4V to 3.0V (f(XIN)=7MHZ, without software ...
Description SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

File Size 3,124.07K  /  246 Page

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    EBD25UC8AAFA-7B

Elpida Memory
Part No. EBD25UC8AAFA-7B
OCR Text ...k (tis) 1 0 0 1 0 0 0 0 90h 0.9ns *1 33 address and command hold time after clock (tih) 1 0 0 1 0 0 0 0 90h 0.9ns *1 eol product ebd25uc8aafa data sheet e0360e20 (ver. 2.0) 6 byte no. function described bit7 bit6 b...
Description 256MB Unbuffered DDR SDRAM DIMM
   256MB Unbuffered DDR SDRAM DIMM

File Size 166.30K  /  18 Page

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    Elpida Memory, Inc.
ELPIDA[Elpida Memory]
Part No. HB54A5129F1U HB54A5129F1U-B75B HB54A5129F1U-A75B HB54A5129F1U-10B
OCR Text ...s 20ns 45ns 50ns 1 bank 512MB 0.9ns*5 1.1ns*5 0.9ns*5 1.1ns*5 0.5ns*5 0.6ns*5 0.5ns*5 0.6ns*5 Future use 65ns*5 70ns*5 75ns*5 80ns*5 12ns*5 500ps*5 600ps*5 750ps*5 1000ps*5 Future use Initial 3 51 248 HITACHI Address and command hold tim...
Description 512MB Registered DDR SDRAM DIMM

File Size 179.21K  /  16 Page

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    Elpida Memory, Inc.
ELPIDA[Elpida Memory]
Part No. HB54A5129F1 HB54A5129F1-B75B HB54A5129F1-10B HB54A5129F1-A75B
OCR Text ...s 20ns 45ns 50ns 1 bank 512MB 0.9ns*5 1.1ns*5 0.9ns*5 1.1ns*5 0.5ns*5 0.6ns*5 0.5ns*5 0.6ns*5 Future use 65ns*5 70ns*5 75ns*5 80ns*5 12ns*5 500ps*5 600ps*5 750ps*5 1000ps*5 Future use Initial 3 51 248 HITACHI Address and command hold tim...
Description 512MB Registered DDR SDRAM DIMM

File Size 159.00K  /  16 Page

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    ST Microelectronics
Part No. STP6NB25 STP6NB25FP
OCR Text ... v (see test circuit, figure 3) 9ns t r 9ns q g total gate charge v dd = 200v, i d = 6 a, v gs = 10v 12 17 nc q gs gate-source charge 7.5 nc q gd gate-drain charge 3 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-v...
Description N-CHANNEL 250V - 0.9 OHM - 5A - TO-220/TO-220FP POWERMESH MOSFET

File Size 320.20K  /  9 Page

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    Mitsubishi Electric Corporation
Part No. M30302M8L-XXXFP M30302M8L-XXXGP M30302MAL-XXXFP M30302MAL-XXXGP M30302MCL-XXXFP M30302MCL-XXXGP
OCR Text ...N)=16MHZ, VCC=3.0V to 3.6V) 142.9ns (f(XIN)=7MHZ, VCC=2.4V to 3.6V without software wait) * Supply voltage ..................................... 3.0V to 3.6V (f(XIN)=16MHZ, without software wait) 2.4V to 3.6V (f(XIN)=7MHZ, without software ...
Description M16C/30L Series Microcontrollers: Compact Internal Peripherals

File Size 2,175.51K  /  165 Page

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    TE Connectivity, Ltd.
Part No. HY5DU283222Q-45
OCR Text ...ers a) tIS/tIH : Changed from 0.9ns to 1.0ns b) tDS/tDH : Changed from 0.45ns to 0.5ns 6) Changed VIH/VIL from Vref +/- 0.31V to Vref +/- 0.35V 1. Revision 0.4 (Jun. 01) 1) Changed some AC parameters a) tAC : Changed from 0.7ns to 0.9ns...
Description DDR Synchronous DRAM DDR同步DRAM

File Size 271.91K  /  27 Page

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    HY5DU283222Q HY5DU283222Q-45 HY5DU283222Q-55 HY5DU283222Q-5 HY5DU283222Q-4

HYNIX[Hynix Semiconductor]
Part No. HY5DU283222Q HY5DU283222Q-45 HY5DU283222Q-55 HY5DU283222Q-5 HY5DU283222Q-4
OCR Text ...) tAC : Changed from 0.7ns to 0.9ns b) tDQSCK : Changed from 0.6ns to 0.7ns c) tRCD/tRP : Changed from 4clks to 5clks at 222MHz and from 3clks to 4clks at 200/183MHz Removed 166MHz part from speed bin Defined IDD specification Defined AC pa...
Description GDDR SDRAM - 128Mb
128M(4MX32) GDDR SDRAM

File Size 326.64K  /  27 Page

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    Mitsubishi Electric Corporation
Part No. M30623M4T-243GP M30623M4T-245GP M30623M4T-246GP M30623MAH-A81GP M30623MAA-2ATGP M30623M4-XXXGP M30621M8-XXXGP M30623M8-XXXGP M30621M8-5B3GP M30621MA-XXXGP M30623MA-XXXGP M30621MC-XXXGP M30623MC-XXXGP M30625MG-XXXGP M30625FGLGP M30625FGGP M30621ECGP
OCR Text ...OM, flash memory 5V version 142.9ns (f(XIN)=7MHZ, VCC=3V, with software one-wait) : One-time PROM version * Supply voltage ..................................... 4.2 to 5.5V (f(XIN)=16MHZ, without software wait) : Mask ROM, flash memory 5V v...
Description SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

File Size 2,856.25K  /  230 Page

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