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  8605 Datasheet PDF File

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    STM901-30 2879

ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STM901-30 2879
OCR Text 860 .26 .I .P .GAI NEAR POWER AMPLIFIER - 900 MHz VOLTS NPUT/OUTPUT 50 OHMS OU T = +44.7 dBm PEP N = 35 dB MIN. CASE STYLEH141 ORDER C...5. VD 9. VB2 2. VG1 6. VB1 10. Cap2 3. deleted 4. VG2 7. Cap1 8. VC1 11. VC2 12. RF Output V, VD ...
Description RF Power Module Linear Base Station Applications(用于线性基站的RF功率模块)
From old datasheet system

File Size 144.90K  /  8 Page

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    TP3032

Motorola Inc
Motorola, Inc
Part No. TP3032
OCR Text ...radation in Output Power f = 860 MHz f = 860 MHz Zin 980 980 ZOL* Zo = 10 VCE = 26 V f (MHz) 860 880 900 935 960 980 Zin () 2.9 - j0.4 2.9 - j0.9 2.9 - j1.45 3.2 - j0.95 3.25 - j1.5 3.55 - j1.1 Pout = 21 W ZOL* () 2 + j2.2 2.1 ...
Description RF POWER TRANSISTOR NPN SILICON

File Size 117.97K  /  4 Page

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    U4070B-FP U4074B

TEMIC[TEMIC Semiconductors]
Part No. U4070B-FP U4074B
OCR Text ...50 125 -25 to + 60 -40 to + 125 860 400 Unit mA mA C C C mW mW Thermal Resistances Parameters Junction ambient DIP14 SO16 Symbol RthJA V...5 Vrms I(O1, O2) = IZ = 1 mA (Pin 2) 0.5 mA > IDD < 1.5 mA Va , Vb , VB Symbol I Min. Typ. 1.1 Max. ...
Description Tone Ringer Interface

File Size 97.80K  /  6 Page

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    U4076B U4076B-FL

TEMIC[TEMIC Semiconductors]
Part No. U4076B U4076B-FL
OCR Text ...A mA C C C " Ptot Ptot 860 720 mW mW Thermal Resistance Parameters Junction ambient DIP14 SO16-L Symbol RthJA RthJA Value 75...5), Pin 13 (15) ground, unless otherwise specified. Parameters Supply current (no load) outputs open...
Description Three-Tone Ringer for Telephone Sets

File Size 88.83K  /  6 Page

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    AT603 AT603S16

POSEICO[Power Semiconductors]
Part No. AT603 AT603S16
OCR Text ... typical From 75% VDRM up to 860 A, gate 10V 5ohm Linear ramp up to 70% of VDRM VD=100V, gate source 10V, 10 ohm , tr=.5 s dV/dt = 20 V/s linear up to 75% VDRM di/dt=-20 A/s, I= 560 A VR= 50 V VD=5V, gate open circuit VD=5V, tp=30s 12...
Description PHASE CONTROL THYRISTOR

File Size 35.59K  /  3 Page

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    HGTD10N40F1 HGTD10N40F1S HGTD10N50F1 HGTD10N50F1S

INTERSIL[Intersil Corporation]
Part No. HGTD10N40F1 HGTD10N40F1S HGTD10N50F1 HGTD10N50F1S
OCR Text ...4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 ...5 250 100 2.5 2.2 2.5 2.2 UNITS V V A A nA V V V V V nC ns ns ns ns mJ PARAMETERS Collector-Emitt...
Description 10A/ 400V and 500V N-Channel IGBTs
10A, 400V and 500V N-Channel IGBTs

File Size 32.54K  /  4 Page

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    LET9060S

STMICROELECTRONICS[STMicroelectronics]
Part No. LET9060S
OCR Text ...ance G Zin S FREQ. MHz 860 880 900 920 940 960 ZIN () 0.65 - j 0.05 0.75 - j 0.6 0.9 - j 1.4 0.4 - j 1.3 0.4 - j 0.8 0.5 - j 1.6 ZDL() 2.0 + j 0.1 2.0 + j 0.1 1.4 + j 0.2 1.4 + j 0.5 1.2 + j 0.3 1.8 + j 1.0 ESD PROTECTION ...
Description RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

File Size 294.85K  /  10 Page

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    NTE3122

NTE[NTE Electronics]
Part No. NTE3122
OCR Text ... 10mA, RL = 100 - - Typ - - 0.7 860 80 70 Max 4.0 10-6 1.0 - - - Unit mA A V nm s s VCE = 10V, Ee = 0 1mW/cm2, Collector-Emitter Satur...5) .116 (2.95) .085 (2.15) .157 (4.0) .728 (18.5) .118 (3.0) 1.575 (40.0) Emitter Col...
Description Phototransistor Silicon NPN, Narrow Acceptance, High Sensitivity, Darlington

File Size 18.36K  /  2 Page

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    NTE3123

NTE[NTE Electronics]
Part No. NTE3123
OCR Text ...5mA, RL = 100 - - - Typ 0.4 - - 860 400 300 40 Max 0.8 10-6 1.0 - 2000 1500 - Unit mA A V nm s s deg. Collector-Emitter Saturation Voltag...5) Dia .059 (1.5) .110 (2.8) .045 (1.15) .157 (4.0) .728 (18.5) .118 (3.0) 1.575 (40....
Description Phototransistor Silicon NPN, Intermediate Acceptance, High Sensitivity, Darlington

File Size 19.37K  /  2 Page

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