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CXA16 33102 ATS03 SAA5288 TDA5210 E000498 MAX328 01201
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  6-ch Datasheet PDF File

For 6-ch Found Datasheets File :: 28979    Search Time::1.422ms    
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    FYA-R021407ZX-0 FYA-R021407ZX-1 FYA-R021407ZX-2 FYA-R021407ZX-3 FYA-R021407ZX-4

Ningbo Foryard Optoelectronics Co., Ltd.
Part No. FYA-R021407ZX-0 FYA-R021407ZX-1 FYA-R021407ZX-2 FYA-R021407ZX-3 FYA-R021407ZX-4
OCR Text ...b) (c) (d) (2) (3) (8) (4) (1) (6) (5) (9) (10) wavelength(nm) relative intensity vs wavelength( ) p (1) - gaasp/gaas 655nm/red (2) - gap 5...ch ina zip.: 315051 tel: 0086 - 574 - 87927870 87933652 fax:0086 - 574 - 87927917 http://www.foryard...
Description LED BARGRAPH DISPLAY

File Size 312.04K  /  5 Page

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    FMR17N60ES

Fuji Electric
Part No. FMR17N60ES
OCR Text ...marks drain-source voltage v ds 6 00 v v dsx 6 00 v v gs = -30v continuous drain current i d 17 a pulsed drain current i dp 6 8 a gate-s...ch 150 c t stg -55 to + 150 c isolation voltage v i so 2 kvrms t = 60sec, f = 60hz outline drawings ...
Description N-CHANNEL SILICON POWER MOSFET

File Size 462.68K  /  5 Page

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    2SK1098-M

FUJI[Fuji Electric]
Part No. 2SK1098-M
OCR Text ...R V GS PD T ch T stg Rating 150 6 24 6 20 30 150 -55 ~ +150 Unit V A A A V W C C > Equivalent Circuit - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero ...
Description N-channel MOS-FET

File Size 176.27K  /  2 Page

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    2SK1151 2SK1151L 2SK1151S 2SK1152 2SK1152L 2SK1152S

HITACHI[Hitachi Semiconductor]
Part No. 2SK1151 2SK1151L 2SK1151S 2SK1152 2SK1152L 2SK1152S
OCR Text ... VDSS Ratings 450 500 30 1.5 6 1.5 20 150 -55 to +150 Unit V V A A A W C C 2 2SK1151(L)(S), 2SK1152(L)(S) Electrical Charact...ch-c(t) = S (t) * ch-c ch-c = 6.25C/W, TC = 25C PDM D = PW T 0.03 0.01 ot Pu h 1S lse T 10...
Description    Silicon N-Channel MOS FET
Power switching MOSFET

File Size 47.75K  /  9 Page

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    2SK1153 2SK1154

HITACHI[Hitachi Semiconductor]
Part No. 2SK1153 2SK1154
OCR Text ...ltage VDS (V) 20 0 2 4 6 8 Gate to Source Voltage VGS (V) 10 4 2SK1153, 2SK1154 Drain to Source Saturation Voltage vs. Ga...ch-c(t) = S (t) * ch-c ch-c = 4.17C/W, TC = 25C PDM D = PW T PW T 100 m 1 10 Switching Time Test ...
Description Silicon N Channel MOS FET
Silicon N-Channel MOS FET

File Size 47.74K  /  9 Page

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    2SK1155 2SK1156

HITACHI[Hitachi Semiconductor]
Part No. 2SK1155 2SK1156
OCR Text ... -25C VDS = 20 V Pulse Test 75C 6 TC = 25C 8 Drain Current ID (A) 8 6 5.0 V 4 4.5 V 2 VGS = 4 V 0 10 20 30 40 50 4 2 0 ...ch-c (t) = S (t) * ch-c ch-c = 2.50C/W, TC = 25C PDM PW T 1m 10 m Pulse Width PW (s) 100 m 1 D = PW ...
Description Silicon N Channel MOS FET
Silicon N-Channel MOS FET

File Size 48.47K  /  9 Page

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    2SK1157 2SK1158

Hitachi Semiconductor
Part No. 2SK1157 2SK1158
OCR Text ...-- -- -- -- -- -- -- -- -- -- 0.6 0.7 6.5 1050 280 40 15 55 95 40 0.95 320 3.0 0.8 0.9 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns ...ch-c (t) = S (t) * ch-c ch-c = 2.08C/W, TC = 25C PDM PW 1 D = PW T 0.01 10 0.01 ulse tP ho 1S...
Description Silicon N-Channel MOS FET

File Size 48.24K  /  9 Page

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    2SK1159 2SK1160

Hitachi Semiconductor
Part No. 2SK1159 2SK1160
OCR Text ...S (V) 12 8 4 0 2 6 8 4 Gate to Source Voltage VGS (V) 10 4 2SK1159, 2SK1160 Drain to Source Saturation Voltage VDS ...ch-c (t) = S (t) * ch-c ch-c = 2.08C/W, TC = 25C PDM uls e 0.03 D= T 100 1m 10 m Pulse Width...
Description Silicon N-Channel MOS FET

File Size 48.23K  /  9 Page

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    2SK1161 2SK1162

Hitachi Semiconductor
Part No. 2SK1161 2SK1162
OCR Text ...-- -- -- -- -- -- -- -- -- -- 0.6 0.7 7.0 1050 280 40 15 60 90 45 1.0 350 3.0 0.8 0.9 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V...ch-c (t) = S (t) * ch-c ch-c = 1.25C/W, TC = 25C PDM D = PW T 0.03 1S 0.01 10 h ul ot P...
Description Silicon N Channel MOS FET
Silicon N-Channel MOS FET

File Size 33.64K  /  6 Page

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    2SK1163 2SK1164 2SK1161 2SK1162

HITACHI[Hitachi Semiconductor]
Part No. 2SK1163 2SK1164 2SK1161 2SK1162
OCR Text ...A/s I D = 5 A, VGS = 10 V, RL = 6 I D = 5 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz V I D = 1 mA, VDS = 10 V I D = 5 A, VGS = 10 V *...ch-c (t) = S (t) * ch-c ch-c = 1.25C/W, TC = 25C PDM D = PW T 0.03 1S 0.01 10 ho lse t...
Description Silicon N-Channel MOS FET

File Size 33.64K  /  6 Page

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For 6-ch Found Datasheets File :: 28979    Search Time::1.422ms    
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