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Hynix Semiconductor, Inc.
HYNIX[Hynix Semiconductor]
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| Part No. |
HY51V65163HGT-6 HY51V65163HGT-45 HY51V65163HGT-5
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| OCR Text |
...ation. Features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal or low power with self refresh). Advanced CMOS process as well as circuit techniques for wide operating margins allow this device to achi... |
| Description |
4M x 16Bit EDO DRAM 4M X 16 EDO DRAM, 50 ns, PDSO50
4M x 16Bit EDO DRAM 4M X 16 EDO DRAM, 60 ns, PDSO50
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| File Size |
95.00K /
11 Page |
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Twilight Technology, Inc.
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| Part No. |
DPS128X16BA3-25C DPS128X16BA3-45M DPS128X16BH3-45I DPS128X16BA3-20M DPS128X16BH3-20B DPS128X16BH3-20C DPS128X16BA3-35B DPS128X16BA3-35M DPS128X16BH3-35I DPS128X16BA3-35I DPS128X16BA3-45B
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| OCR Text |
... access times: 20, 25, 30, 35, 45ns fully static operation - no clock or refresh required single +5v power supply, 10% tolerance ttl compatible common data inputs and outputs low data retention voltage: 2.0v min. packages availab... |
| Description |
128K X 16 MULTI DEVICE SRAM MODULE, 25 ns, PGA50 CERAMIC, MODULE, SLCC, PGA-50
128K X 16 MULTI DEVICE SRAM MODULE, 45 ns, PGA50 CERAMIC, MODULE, SLCC, PGA-50
128K X 16 MULTI DEVICE SRAM MODULE, 45 ns, QFP48 GULLWING, STACK, SLCC-48
128K X 16 MULTI DEVICE SRAM MODULE, 20 ns, PGA50 CERAMIC, MODULE, SLCC, PGA-50
128K X 16 MULTI DEVICE SRAM MODULE, 20 ns, QFP48 GULLWING, STACK, SLCC-48
128K X 16 MULTI DEVICE SRAM MODULE, 35 ns, PGA50 CERAMIC, MODULE, SLCC, PGA-50
128K X 16 MULTI DEVICE SRAM MODULE, 35 ns, QFP48 GULLWING, STACK, SLCC-48
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| File Size |
579.02K /
10 Page |
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Electronic Theatre Controls, Inc.
http://
List of Unclassifed Manufacturers
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| Part No. |
GLT41316-50J3 GLT41316-50FC GLT41316-12P GLT41316-50FA GLT41316-50FB GLT41316-12FA GLT41316-12FB GLT41316-12FC GLT41316-12J3 GLT41316-12J4 GLT41316-20J4 GLT41316-20J3 GLT41316-20TC GLT41316-12PL GLT41316-12Q GLT41316-12T GLT41316-12TC GLT41316-12TS GLT41316-15FA GLT41316-12TQ GLT41316-40TC GLT41316-40TQ GLT41316-40FC GLT41316-40J4 GLT41316-40PL GLT41316-40TS GLT41316-40FA GLT41316-40Q GLT41316-40FB GLT41316-40J3 GLT41316-15TC GLT41316-45TC GLT41316-30PL GLT41316-30J3 GLT41316-30J4 GLT41316-20TS GLT41316-70TC GLT41316-20FA GLT41316-20FB GLT41316-20FC GLT41316-20P GLT41316-20PL GLT41316-20Q GLT41316-20TQ GLT41316-45J3 GLT41316-45J4 GLT41316-15FC GLT41316-15J4 GLT41316-15TQ GLT41316-15Q GLT41316-15J3 GLT41316-15P GLT41316-15PL GLT41316-15TS GLT41316-15FB GLT41316-30FA GLT41316-30FB GLT41316-30FC GLT41316-70J3 GLT41316-70J4 GLT41316-45FB GLT41316-45FC GLT41316-45TS GLT41316-45P GLT41316-45FA GLT41316-45TQ GLT41316-45Q GLT41316-45PL GLT41316-30TC GLT41316-30TQ GLT41316-30Q GLT41316-30TS GLT41316-50TC GLT41316-50Q GLT41316-50TQ GLT41316-50P GLT41316-50PL GLT41316-50J4 GLT41316-50TS GLT41316-60PL GLT41316-70FA GLT41316-70FB GLT41316-70TS GLT41316-70PL GLT41316-70FC GLT41316-70TQ GLT41316-
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| OCR Text |
... tRAC = 35ns tRAC = 40ns tRAC = 45ns
+10 180 170 160 150 4
mA
1,2
ICC2 ICC3
Standby Current,(TTL) Refresh Current, RAS-Only
RAS , CAS at VIH other inputs VSS RAS cycling, CAS at
mA mA 2
VIH tRC = tRC (min.)
RAS at V... |
| Description |
30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125 64K的16的CMOS动态RAM的快速页面模
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE 64K的16的CMOS动态RAM的快速页面模
3.0V 100ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SC70 -40 to 125
2.5V 50ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
20ppm/Degrees C Max, 100uA, SOT23-3 Series Voltage Reference 3-SOT-23 -40 to 125
3.3V 100ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
4.096V 50ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
3.3V 50ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
1.25V 4ppm/Degrees C, 100uA SOT23-6 Series (Bandgap) Voltage Reference 6-SOT-23 -40 to 125
2.048 4ppm/Degrees C, 100uA SOT23-6 Series (Bandgap) Voltage Reference 6-SOT-23 -40 to 125
4.096V 4ppm/Degrees C, 100uA SOT23-6 Series (Bandgap) Voltage Reference 6-SOT-23 -40 to 125
2.5V 4ppm/Degrees C, 100uA SOT23-6 Series (Bandgap) Voltage Reference 6-SOT-23 -40 to 125
3.3V 4ppm/Degrees C, 100uA SOT23-6 Series (Bandgap) Voltage Reference 6-SOT-23 -40 to 125
2.048V 50ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
3.0V 50ppm/Degrees C, 50uA in SOT23-3 Series (Bandgap) Voltage Reference 3-SOT-23 -40 to 125
3.0V 4ppm/Degrees C, 100uA SOT23-6 Series (Bandgap) Voltage Reference 6-SOT-23 -40 to 125
Enhanced Product 4 Ppm/Degreesc 100 Ua Sot23-6 Series Voltage References 6-SOT-23 -55 to 125
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| File Size |
1,499.03K /
22 Page |
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GEC Plessey Semiconductors
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| Part No. |
P11C68
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| OCR Text |
... Retention in EEPROM I 35ns and 45ns Address and Chip Enable Access Times I 20ns and 25ns Output Enable Access I Unlimited Read and Write to SRAM I Unlimited Recall Cycles from EEPROM I 104 Store Cycles to EEPROM I Automatic Recall on Power... |
| Description |
CMOS / SNOS NVSRAM
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| File Size |
183.31K /
17 Page |
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Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
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| Part No. |
EN29F002T-55PI EN29F002T-55JI EN29F002T-90J EN29F002B-70J EN29F002B-70JI EN29F002B-55J EN29F002B-55JI EN29F002B-55P EN29F002B-55PI EN29F002T-70J EN29F002B-45J EN29F002B-45JI EN29F002T-70JI EN29F002T-45JI EN29F002T-45PI EN29F002T-90JI EN29F002T-45T EN29F002N EN29F002B-55TI EN29F002B-45P EN29F002B-45T EN29F002B-45TI EN29F002B-45PI EN29F002B-90JI EN29F002T-70TI EN29F002B-90J EN29F002B-90T EN29F002B-90P EN29F002T-55P EN29F002T-55T EN29F002T-55J EN29F002T-90P EN29F002T-90T EN29F002B-55T EN29F002B-70P EN29F002B-70T EN29F002T-45P EN29F002T-45TI EN29F002NT
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| OCR Text |
... operation * Read Access Time - 45ns, 55ns, 70ns, and 90ns * Fast Read Access Time - 70ns with Cload = 100pF - 45ns, 55ns with Cload = 30pF * Sector Architecture: One 16K byte Boot Sector, Two 8K byte Parameter Sectors, one 32K byte and thr... |
| Description |
2 Megabit (256K x 8-bit) Flash Memory 2兆位56K × 8位）闪存
5V, Half Duplex, 250kbps Slew Rate Limited, ±15kV ESD Protected, 1/8 Unit Load, RS-485/RS-422 Transceiver; Temperature Range: -40°C to 85°C; Package: 8-SOIC
Octal D Flip-Flop with 3-STATE Outputs; Package: TSSOP; No of Pins: 20; Container: Rail
Octal D Flip-Flop with 3-STATE Outputs; Package: DIP; No of Pins: 20; Container: Rail
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| File Size |
272.54K /
32 Page |
View
it Online |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
K4D263238M-QC50 K4D263238M-QC500 K4D263238M-QC45 K4D263238M-QC600 K4D263238M-QC55 K4D263238M-QC450 K4D263238M-QC550
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| OCR Text |
...- changed tdqsq from 0.4ns to 0.45ns. changed tqh from thp-0.6ns to thp-0.45ns. - changed tdqsck & tac from 0.6ns to 0.7ns - changed tdqss from 0.75tck/1.25tck to 0.8tck/1.2tck. accordingly, changed twpreh from 0.25tck to 0.3tck. - chang... |
| Description |
DIODE ZENER DUAL COMMON-CATHODE 300mW 3Vz 5mA-Izt 0.0667 0.1uA-Ir SOT-23 3K/REEL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
4M X 32 DDR DRAM, 0.7 ns, PQFP100 20 X 14 MM, 0.65 MM PITCH, TQFP-100
DIODE ZENER DUAL COMMON-CATHODE 300mW 39Vz 5mA-Izt 0.0513 0.1uA-Ir 29 SOT-23 3K/REEL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
4M X 32 DDR DRAM, 0.75 ns, PQFP100 20 X 14 MM, 0.65 MM PITCH, TQFP-100
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
DIODE ZENER DUAL COMMON-CATHODE 300mW 3.3Vz 5mA-Izt 0.0606 0.1uA-Ir SOT-23 3K/REEL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
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| File Size |
284.29K /
19 Page |
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it Online |
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Price and Availability
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