36.0v pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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36.0v Datasheet PDF File

For 36.0v Found Datasheets File :: 679 Search Time::1.125ms
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				Harris Corporation
Part No.	HGTP3N60C3D07 HGTP3N60C3D
OCR Text	...ction temperature. 2. VCE(PK) = 360V, TJ = +125oC, RGE = 82. CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1996 File Number ...
Description	6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	390.74K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRAM136-0461G
OCR Text	...afe Operating Area 10 ----s V+= 360V, VCC=+15V to 0V See CT2 See CT3 J ns See CT1 IC=2A, V+=400V VCC=15V, L=1mH, TJ=150C Energy losses include "tail" and diode reverse recovery J Units Conditions IC=2A, V+=400V VCC=15V, L=1mH Energy losses ...
Description	iMOTION⑩ Series 4A, 600V Plug N DriveTM Integrated Power Module for Energy Efficient Motor Drives
File Size	359.34K / 20 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTD7N60C3S HGTP7N60C3 FN4141
OCR Text	...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 50. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 3mA, VGE = 0V VCE = BVCES VCE = BVC...
Description	3.3V 72-mc CPLD 14A, 600V, UFS Series N-Channel IGBTs 14A 600V UFS Series N-Channel IGBTs From old datasheet system
File Size	143.46K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4PC30KDPBF
OCR Text	360V VCE (start), T J = 125C, VGE = 15V Combines low conduction losses with high switching speed Tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery...
Description	INSULATED GATE BIPOALR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	339.12K / 11 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	HGT1S7N60C3D HGT1S7N60C3DS HGTP7N60C3D
OCR Text	...ction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RGE = 50. CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright HGTP7N60C3D, HGT1S7N60C3D HGT1S7N60C3DS 600 14 7 8...
Description	3.3V 72-mc CPLD 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
File Size	197.06K / 7 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC] Silicon Standard Corp.
Part No.	SSM25G45EM
OCR Text	... VCE=VGE, IC=250uA IC=50A VCE=360V VGE=5V VCC=225V IC=50A RG=25 VGE=5V VGE=0V VCE=25V f=1.0MHz Thermal Resistance Junction-Ambient Notes: 1.Surface mounted on 1 in2 copper pad of FR4 board ; 125C/W when mounted on min. copper pad. ...
Description	N-CHANNEL INSULATED-GATE BOPOLAR TRANSISTOR N-CHANNEL INSULATED-GATE BIPOLAR TRANSISTOR
File Size	248.24K / 4 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE38 NTE175
OCR Text	...E(off) = 1.5V, TC = +100C VCE = 360V, VBE(off) = 1.5V VCE = 360V, VBE(off) = 1.5V, TC = +100C NTE175 ICEX IEBO VCE = 450V, VBE(off) = 1.5V VCE = 300V, VBE(off) = 1.5V, TC = +150C Emitter Cutoff Current ON Characteristics (Note 2) DC Current...
Description	Silicon Complementary Transistors High Voltage, Medium Power Switch
File Size	28.25K / 3 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGT1S7N60B3S HGTD7N60B3S HGTP7N60B3 FN4412
OCR Text	...imit at less than ICM. 2. VCE = 360V, TJ = 125oC, RG = 50. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 3mA, VGE = 0V VCE = BVCES TC = 25oC...
Description	From old datasheet system 14A 600V UFS Series N-Channel IGBTs 14A, 600V, UFS Series N-Channel IGBTs
File Size	91.85K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGSL30B60K IRGB30B60KPBF IRGS30B60K
OCR Text	... = 150C, Vp = 600V, RG = 10 VCC=360V,VGE = +15V to 0V 16 4 CT2 CT3 WF3 WF3 Note to are on page 13 2 www.irf.com IRGB30B60KPbF, IRGS/L30B60K 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 180 T C (C) Ptot (W)...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	320.07K / 13 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS9A
OCR Text	... at less than ICM. 2. VCE(PK) = 360V, TJ = 125oC, RG = 50 . Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 150oC TC = 25oC TC...
Description	14A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode 14 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diode 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 7A I(C) \| TO-263AB
File Size	158.34K / 8 Page	View it Online	Download Datasheet

For 36.0v Found Datasheets File :: 679 Search Time::1.125ms
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