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  33a Datasheet PDF File

For 33a Found Datasheets File :: 1021    Search Time::2.312ms    
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    FQB33N1004 FQI33N10

Fairchild Semiconductor
Part No. FQB33N1004 FQI33N10
OCR Text ... TM Features * * * * * * * 33a, 100V, RDS(on) = 0.052 @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching. 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D ...
Description 100V N-Channel MOSFET

File Size 589.67K  /  10 Page

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    FDA33N25

Fairchild Semiconductor
Part No. FDA33N25
OCR Text 33a, 0.094 Features * RDS(on) = 0.088 ( Typ.)@ VGS = 10V, ID = 16.5A * Low gate charge ( Typ. 36nC) * Low Crss ( Typ. 35pF) * Fast switching * Improved dv/dt capability * RoHS compliant UniFETTM tm Description These N-Channel enhan...
Description N-Channel MOSFET

File Size 593.49K  /  8 Page

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    IRGP50B60PD1

International Rectifier
Part No. IRGP50B60PD1
OCR Text ...= 2.00v @ v ge = 15v i c = 33a equivalent mosfet parameters r ce(on) typ. = 61m ? i d (fet equivalent) = 50a applications ? telecom and server smps ? pfc and zvs smps circuits ? uninterruptable power supplies ? consumer electronics...
Description 600V Warp2 150kHz Copack IGBT in a TO-247AC package

File Size 316.45K  /  10 Page

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    SPM-34A SPM-32A SPM-33A SPM-35A

JDS Uniphase Corporation
Part No. SPM-34A SPM-32A SPM-33a SPM-35A
OCR Text 33a/-34A/-35A/-36A Selective Level Meters Key Features * For line qualification tests on ISDN, PCM, xDSL, and measurements on analog transmission systems up to 3.5 MHz * Synthesizer for accurate, stable frequency settings * Straightforw...
Description Selective Level Meters

File Size 212.30K  /  4 Page

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    FRA012-S05-I FRA012-S12-I FRA012-S24-I FRA012-S07-I FRA012-S09-I FRA012-S18-I FRA012-S15-I GE1207-P1J GE1209-P1J GE12I18

Mean Well Enterprises Co., Ltd.
Part No. FRA012-S05-I FRA012-S12-I FRA012-S24-I FRA012-S07-I FRA012-S09-I FRA012-S18-I FRA012-S15-I GE1207-P1J GE1209-P1J GE12I18-P1J GE1215-PIJ GE12I24-P1J GE1212-P1J GE1205-P1J
OCR Text ...ge 9v 7.5v 5v 12v 15v 18v 24v 1.33a 1.33a 2.0a 1.0a 0.8a 0.83a 0.625a current range 0 ~ 1.33a 0 ~ 1.33a 0 ~ 2.0a 0 ~ 1.0a 0 ~ 0.8a 0 ~ 0.83a 0 ~ 0.625a ripple & noise (max.) note.3 100mvp-p 75mvp-p 50mvp-p 120mvp-p 150mvp-p 180mvp-p 240mvp-...
Description 10~15WAC-DC Single Output Interchangeable Wall-mounted type

File Size 187.20K  /  2 Page

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    BDX33 BDX33A BDX33B BDX33C BDX34A BDX34B BDX34C BDX34

TRANSYS Electronics Limited
Part No. BDX33 BDX33a BDX33B BDX33C BDX34A BDX34B BDX34C BDX34
OCR Text 33a, 33B, 33C, 33D BDX34, 34A, 34B, 34C, 34D TO-220 Plastic Package Power Darlington for Linear Switchilng Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage ...
Description NPN/PNP PLASTIC POWER TRANSISTORS

File Size 94.12K  /  3 Page

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    FQB33N10L FQI33N10L FQB33N10LTM

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. FQB33N10L FQI33N10L FQB33N10LTM
OCR Text ... TM Features * * * * * * * 33a, 100V, RDS(on) = 0.052 @VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 70 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D ...
Description 100V LOGIC N-Channel MOSFET
100V N-Channel Logic Level QFET
100 LOGIC N-Channel MOSFET

File Size 659.33K  /  9 Page

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    FQB33N10 FQB33N1004 FQB33N10TM FQI33N10

FAIRCHILD SEMICONDUCTOR CORP
http://
FAIRCHILD[Fairchild Semiconductor]
Part No. FQB33N10 FQB33N1004 FQB33N10TM FQI33N10
OCR Text ... TM Features * * * * * * * 33a, 100V, RDS(on) = 0.052 @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching. 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating D ...
Description 100V N-Channel MOSFET(婕???靛?涓?00V??娌??澧?己??OS?烘?搴??)
100V N-Channel QFET
100 N-Channel MOSFET

File Size 583.46K  /  9 Page

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    IPI47N10SL-26 IPP47N10SL-26 IPB47N10SL-26

Infineon Technologies AG
Part No. IPI47N10SL-26 IPP47N10SL-26 IPB47N10SL-26
OCR Text ...e resistance v gs =4.5v, i d =33a r ds(on) - 25 40 m drain-source on-state resistance v gs =10v, i d =33a r ds(on) - 18 26 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. p...
Description SIPMOS Power-Transistor N-Channel Enhancement mode Logic Level

File Size 545.63K  /  8 Page

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    MJ8501

Inchange Semiconductor Company Limited
Part No. MJ8501
OCR Text ...tion voltage i c = 1a; i b = 0.33a b i c = 1a; i b = 0.33a,t b c =100 2.0 3.0 v v ce (sat)- 2 collector-emitter saturation voltage i c = 2.5a; i b = 1a 5.0 v v be (sat) base-emitter saturation voltage i c = 1a; i b = 0....
Description Silicon NPN Power Transistor

File Size 105.32K  /  2 Page

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