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300s Datasheet PDF File

For 300s Found Datasheets File :: 11465 Search Time::0.656ms
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				TriQuint Semiconductor
Part No.	T1G2028536-FLEVB1 T1G2028536-FL-15
OCR Text	... = 36 v, i dq = 576 ma; pulse: 300s, 10% rf characterization ? load pull performance at 1.0 ghz (1) test conditions unless otherwise noted: t a = 25 c, v d = 36 v, i dq = 576 ma symbol parameter min typical max units g lin...
Description	285W, 36V DC ?2 GHz, GaN RF Power Transistor
File Size	981.61K / 13 Page	View it Online	Download Datasheet

				BOURNS[Bourns Electronic Solutions]
Part No.	CD214A-B140LLF CD214A-B1100L CD214A-B1100LLF CD214A-B120 CD214A-B130L CD214A-B130LLF CD214A-B140L
OCR Text	....1 0.1 Tj=75 C PULSEWIDTH 300s 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 Tj=25 C 0.001 0 20 40 60 80 100 120 140 Forward Voltage (Volts) Percent of Rated Peak Reverse Voltage (%) Derating Curve 1.25 Capacitance...
Description	Schottky Barrier Rectifier Chip Diode
File Size	299.95K / 6 Page	View it Online	Download Datasheet

				http:// WTE[Won-Top Electronics]
Part No.	BAS70WS-T1 BAS40WS BAS40WS-T1 BAS70WS
OCR Text	...on @ IR = 10A @ IF = 1.0mA, t < 300s @ IF = 10mA, t < 300s @ IF = 15mA, t < 300s @ VR = 50V, t < 300s VR = 0V, f = 1.0MHz IF = 10mA through IR = 10mA to IR = 1.0mA, RL = 100 Note: 1. Device on fiberglass substrate. BAS70WS 1 of 3 ...
Description	SURFACE MOUNT SCHOTTKY BARRIER DIODE
File Size	33.31K / 3 Page	View it Online	Download Datasheet

				Jiangsu Changjiang Electronics Technology Co., Ltd JIANGSU[Jiangsu Changjiang Electronics]
Part No.	BAS70WS-SOD-323 BAS70WS
OCR Text	... Test Condition IR=10uA tp <300s, IF = 1.0mA tp <300s, IF = 15mA -- 3/4 3/4 -- mV nA pF ns tp < 300s, VR = 50V VR = 0V, f = 1.0MHz IF = IR = 10mA to IR = 1.0mA, RL =100W 1. Valid Provided that terminals are kept at ambient t...
Description	SCHOTTKY DIODE
File Size	291.28K / 3 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated]
Part No.	BAS70W_1 BAS70W BAS70W-04 BAS70W-04-7-F BAS70W-05 BAS70W-05-7-F BAS70W-06 BAS70W-06-7-F BAS70W-7-F
OCR Text	...ns Test Condition IR = 10mA tp <300s, IF = 1.0mA tp <300s, IF = 15mA tp < 300s, VR = 50V VR = 0V, f = 1.0MHz IF = IR = 10mA to IR = 1.0mA, Irr = 0.1 x IR, RL = 100W Value 70 49 70 100 200 625 -55 to +125 -65 to +150 Unit V V mA mA mW C/W C ...
Description	SURFACE MOUNT SCHOTTKY BARRIER DIODE
File Size	67.35K / 3 Page	View it Online	Download Datasheet

				WTE[Won-Top Electronics]
Part No.	BAS70W-T1 BAS70AW BAS70AW-T1 BAS70CW BAS70CW-T1 BAS70SW BAS70SW-T1 BAS70W
OCR Text	...n @ IR = 10A @ IF = 1.0mA, tp < 300s @ IF = 10mA, tp < 300s @ IF = 15mA, tp < 300s @ VR = 50V, tp < 300s VR = 0V, f = 1.0MHz IF = 10mA through IR = 10mA to IR = 1.0mA, RL = 100 Forward Voltage Reverse Leakage Current Junction Capacitance...
Description	SURFACE MOUNT SCHOTTKY BARRIER DIODE
File Size	60.18K / 5 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated]
Part No.	BAS70TW_1 BAS70BRW BAS70BRW-7-F BAS70DW-04 BAS70DW-04-7-F BAS70DW-05 BAS70DW-05-7-F BAS70DW-06 BAS70DW-06-7-F BAS70TW BAS70TW-7-F
OCR Text	... Test Condition IR = 10mA tp <300s, IF = 1.0mA tp <300s, IF = 15mA tp < 300s, VR = 50V VR = 0V, f = 1.0MHz IF = IR = 10mA to IR = 1.0mA, Irr = 0.1 x IR, RL = 100W 1. Part mounted on FR-4 board with recommended pad layout, which can be ...
Description	SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
File Size	68.52K / 3 Page	View it Online	Download Datasheet

				Diodes, Inc. Diodes Inc. DIODES[Diodes Incorporated]
Part No.	BAS70H-06 BAS70H BAS70H-04 BAS70H-05
OCR Text	...ns Test Condition IR = 10mA tp <300s, IF = 1.0mA tp <300s, IF = 15mA tp < 300s, VR = 50V VR = 0V, f = 1.0MHz IF = IR = 10mA to IR = 1.0mA, RL =100W Characteristic Reverse Breakdown Voltage (Note 2) Forward Voltage Peak Reverse Current Ju...
Description	SURFACE MOUNT SCHOTTKY BARRIER DIODE 表面贴装肖特基势垒二极管
File Size	59.63K / 1 Page	View it Online	Download Datasheet

				DIODES[Diodes Incorporated]
Part No.	BAS40_ BAS40 BAS40-04 BAS40-04-7-F BAS40-05 BAS40-05-7-F BAS40-06 BAS40-06-7-F BAS40-7-F
OCR Text	...ns Test Condition IR = 10A tp < 300s, IF = 1.0mA tp < 300s, IF = 40mA tp < 300s, VR = 30V VR = 0V, f =1.0MHz IF = IR = 10mA to IR = 1.0mA, RL = 100 Notes: 1. 2. 3. Part mounted on FR-4 board with recommended pad layout, which can b...
Description	SURFACE MOUNT SCHOTTKY BARRIER DIODE
File Size	215.85K / 3 Page	View it Online	Download Datasheet

				Anpec Electronics, Corp. ANPEC[Anpec Electronics Coropration]
Part No.	APM4550KC-TRL APM4550K
OCR Text	...oltage Continuous Drain Current 300s Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation TA=25C TA=100C VGS=10V (TA = 25C unless otherwise noted) N Channel 30 20 7 3...
Description	Dual Enhancement Mode MOSFET (N- and P-Channel) 双增强型MOS管（N沟道和P沟道
File Size	238.85K / 13 Page	View it Online	Download Datasheet

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