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  3.9a Datasheet PDF File

For 3.9a Found Datasheets File :: 5667    Search Time::1.484ms    
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    2SJ531

HITACHI[Hitachi Semiconductor]
Part No. 2SJ531
OCR Text ...ne TO-220CFM D G 12 3 S 1. Gate 2. Drain 3. Source 2SJ531 Absolute Maximum Ratings (Ta = 25C) Item Drain to source vo...9A, VGS = -10V Note4 I D = -9A, VGS = -4V Note4 I D = -9A, VDS = -10V Note4 VDS = -10V VGS = 0 f = 1...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 49.99K  /  9 Page

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    AP09N70I-H-HF AP09N70I-H-HF-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP09N70I-H-HF AP09N70I-H-HF-14
OCR Text ...ermal resistance, junction-case 3 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data & specifications subject to change wit...9a - 44 - nc q gs gate-source charge v ds =480v - 11 - nc q gd gate-drain ("miller") charge v gs =10...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
8.3 A, 700 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Fast Switching Characteristic

File Size 60.00K  /  4 Page

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    AP09N70I-A-HF AP09N70I-A-HF-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP09N70I-A-HF AP09N70I-A-HF-14
OCR Text ...ermal resistance, junction-case 3 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data & specifications subject to change wit...9a - 44 - nc q gs gate-source charge v ds =480v - 11 - nc q gd gate-drain ("miller") charge v gs =10...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 95.36K  /  4 Page

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    Advanced Power Electronics
Part No. AP09N70I-A-HF
OCR Text ...ermal resistance, junction-case 3 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data & specifications subject to change wit...9a - 44 - nc q gs gate-source charge v ds =480v - 11 - nc q gd gate-drain ("miller") charge v gs =10...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 122.63K  /  4 Page

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    Kersemi Electronic Co., Ltd.
Kersemi Electronic Co.,...
Part No. IRFR/U9120N IRFR9120NTRR
OCR Text ...its r q jc junction-to-case CCC 3.1 r q ja junction-to-ambient (pcb mount)** CCC 50 c/w r q ja junction-to-ambient CCC 110 thermal resistanc...9a, v gs = 0v ? t rr reverse recovery time CCC 100 150 ns t j = 25c, i f = -4.0a q rr reverse re...
Description HEXFET Power MOSFET

File Size 3,878.25K  /  10 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4700
OCR Text ... identical. g s a a d d k k 1 2 3 4 8 7 6 5 soic-8 a k g d s n-channel enhancement mode field effect transistor with schottky diode gen...9a gate drain charge reverse transfer capacitance turn-on rise time turn-off delaytime gate resistan...
Description N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

File Size 334.30K  /  5 Page

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    TY Semiconductor Co., Ltd
Part No. KRF7338
OCR Text ...rrent,v gs @10v , t a =25 i d 6.3 -3.0 continuous drain current ,v gs @10v , t a =70 i d 5.2 -2.5 pulsed drain current *1 i dm 26 -13 power ...9a*1 0.150 v gs = -2.7v, i d = -1.5a*1 0.200 v ds =v gs ,i d = 250 a n-ch 0.6 1.5 v ds =v gs ,i d = ...
Description Ultra Low On-Resistance Dual N and P Channel MOSFET Available in Tape & Reel

File Size 998.56K  /  3 Page

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    AP4438BGM-HF AP4438BGM-HF-14

Advanced Power Electronics Corp.
Advanced Power Electron...
Part No. AP4438BGM-HF AP4438BGM-HF-14
OCR Text ...al resistance, junction-ambient 3 50 /w data and specifications subject to change without notice halogen-free product thermal data paramete...9a - 9.8 14 m ? v gs =4.5v, i d =5a - 16.8 20 m ? v gs(th) gate threshold voltage v ds =v gs , i d =...
Description Lower Gate Charge, Simple Drive Requirement

File Size 91.73K  /  4 Page

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    SUF2001

KODENSHI KOREA CORP.
Part No. SUF2001
OCR Text ...? low v gs(th) : v gs(th) =1.0~3.0v ? small footprint due to small package ? low r gds(on) : n-ch, r ds(on) =24m ? (@ v gs= 10v, i d= 2.9a) p-ch, r ds(on) =66m ? (@ v gs= -10v, i d =-2.7a) ordering information pa...
Description 30V Dual N-and P-channel Trench MSFET

File Size 542.97K  /  13 Page

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