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Samsung Electronic
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| Part No. |
K3N6VU4000E-DC
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| OCR Text |
... cc power v ss ground 32m-bit (2mx16) cmos mask rom the k3n6v(u)4000e-dc is a fully static mask programmable rom organized 2,097,152x16 bit. it is fabricated using silicon- gate cmos process technology. this device operates with 3.0v or ... |
| Description |
32M-Bit (2mx16) CMOS MASK ROM Data Sheet
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| File Size |
45.46K /
3 Page |
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Download Datasheet
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SAMSUNG ELECTRONICS
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| Part No. |
K1B3216BDD
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| OCR Text |
2mx16 bit synchronous burst uni-transistor random access memory the attached datasheets are provided by samsu ng electronics. samsung electronics co., ltd. reserve the right to change the spe cifications and products. samsung electronics ... |
| Description |
2mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
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| File Size |
798.29K /
42 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KM23V32005BT KM23V32005BET
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| OCR Text |
2mx16) cmos mask rom the km23v32005b(e)t is a fully static mask programmable rom fabricated using silicon gate cmos process technology, and is organized either as 4,194,304x8 bit(byte mode) or as 2,097,152x16 bit(word mode) depending on bhe... |
| Description |
32M-Bit (4Mx8 /2mx16) CMOS Mask ROM(32M4Mx8 /2mx16) CMOS掩膜ROM)
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| File Size |
64.60K /
5 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
KM23V32000CT KM23V32000CET
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| OCR Text |
....c no connection 32m-bit (4mx8 /2mx16) cmos mask rom the km23v32000c(e)t is a fully static mask programmable rom fabricated using silicon gate cmos process technology, and is organized either as 4,194,304x8 bit(byte mode) or as 2,097,152x16... |
| Description |
32M-Bit (4Mx8 /2mx16) CMOS Mask ROM(32M(4Mx8 /2mx16) CMOS掩膜ROM) 32兆位Mx8 / 2mx16）的CMOS掩模ROM2兆位Mx8 / 2mx16）的CMOS掩膜光盘
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| File Size |
56.80K /
4 Page |
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it Online |
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