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  25.999 Datasheet PDF File

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    AD780CR AD780CR-REEL7 AD780BN AD780BR AD780BR-REEL AD780BR-REEL7 AD780AR AD780AR-REEL7 AD780 AD780AN

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AD[Analog Devices]
Analog Devices, Inc.
Part No. AD780CR AD780CR-REEL7 AD780BN AD780BR AD780BR-REEL AD780BR-REEL7 AD780AR AD780AR-REEL7 AD780 AD780AN
OCR Text ...0 AD780-SPECIFICATIONS (T = +25 C, V A IN = +5 V unless otherwise noted) AD780CR Min 2.4985 2.9950 Typ Max 2.5015 3.0050 7 20 AD780BN/BR Min 2.499 2.999 Typ Max 2.501 3.001 3 Unit Volts Volts ppm/C ppm/C AD780AN/AR Parameter O...
Description ECONOLINE: REC2.2-S_DRW(Z)/H* - 2.2W DIP Package- 1kVDC Isolation- Regulated Output- 4.5-9V, 9-18V, 18-36V, 36-72V Wide Input Range 2 : 1- UL94V-0
Replacement bulbs are sold in packs of ten; Light Type: Bulb; Rated Voltage: 220V; Style: Replacement bulbs; Volts & Watts: 220V10W; Applicable Model
2.5 V/3.0 V High Precision Reference 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PDSO8

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    EL2009C EL2009CT

ELANTEC[Elantec Semiconductor]
Part No. EL2009C EL2009CT
OCR Text ... Absolute Maximum Ratings (TA e 25 C) VS VIN IIN PD Supply Voltage (V a b Vb) Input Voltage (Note 1) Input Current (Note 1) Power Dissipati...999 0 90 0 89 g3V g14V g12V g10V g10V g12V g11 I 15 I I I IV 09 14 1 30 60 45 18 1...
Description 90 MHz 1 Amp Buffer Amplifier

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    HI7133 HI7133CM44 HI7133CPL HI7131 HI7131CPL FN3373 HI7131CM44

INTERSIL[Intersil Corporation]
Part No. HI7133 HI7133CM44 HI7133CPL HI7131 HI7131CPL FN3373 HI7131CM44
OCR Text ... 5 6 7 8 9 10 31 30 29 28 27 26 25 24 NC G2 C3 A3 G3 BPGND POL AB4 E3 F3 B3 REF LO HI7131CM44, HI7133CM44 (MQFP) TOP VIEW COMMON IN L...999 000 999/ 1000 0.2 0.2 0.2 +000 1001 1 1 1 0.01 5 0.01 - Reading Reading Rollover Err...
Description From old datasheet system
3 1/2 Digit Low Power High CMRR LCD/LED Display-Type A/D Converters
3 1 / 2 Digit, Low Power, High CMRR, LCD/LED Display-Type A/D Converters
3 1/2 Digit, Low Power, High CMRR, LCD/LED Display-Type A/D Converters

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    IRF5806

IRF[International Rectifier]
Part No. IRF5806
OCR Text ....0A -15 VDS = -16V, VGS = 0V A -25 VDS = -16V, VGS = 0V, TJ = 70C -100 VGS = -12V nA 100 VGS = 12V 11.4 ID = -4.0A --- nC VDS = -16V --- VGS...999 2 000 Y 1 2 3 4 5 6 7 8 9 0 W A B C D TOP W AFE R LO T NUMBER CO DE B OT TO M P A R...
Description Power MOSFET(Vdss=-20V)

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    PTF10021

Ericsson Microelectronics
Part No. PTF10021
OCR Text ...eakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS...999 1.000 0.996 0.898 0.590 0.443 0.655 0.747 0.831 0.904 0.944 0.966 0.990 S21 Ang -150.8 -156....
Description 30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦,1.4-1.6 GHzGOLDMOS场效应晶体管
30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor

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    PTF10133

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10133
OCR Text ... e Conditions VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Symbol V(BR)DSS IDSS VGS(th) gfs...999 0.995 0.996 0.998 0.997 0.997 0.993 0.991 0.989 0.987 0.993 0.989 0.982 0.982 0.990 0.990 0.986 ...
Description 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦,860-960兆赫GOLDMOS场效应晶体管
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor

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    PTF10138

Ericsson Microelectronics
ERICSSON[Ericsson]
Part No. PTF10138
OCR Text ... e Conditions VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Symbol V(B...999 0.996 0.990 0.992 0.994 0.996 0.989 0.985 0.990 0.993 0.987 0.986 0.988 0.986 0.990 0.985 Ang...
Description 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor

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    PTF10139

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10139
OCR Text ...eakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductan...999 0.996 0.990 0.992 0.994 0.996 0.989 0.985 0.990 0.993 0.987 0.986 0.988 0.986 0.990 0.985 Ang...
Description 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 60瓦,860-960兆赫GOLDMOS场效应晶体管

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    RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-0009 PRFS-1006-0006 PRFS-1006-0005 PRFS-1006-0EVL

ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
Part No. RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-0009 PRFS-1006-0006 PRFS-1006-0005 PRFS-1006-0EVL
OCR Text ...D PAD AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM PAD TIP. 0.50 TYP 0.05 1.00 2.80 SQ TOP VIEW SIDE VIEW BOTTOM VIEW 4x4 mm...999 pcs. 2 05/2003 NOTES 05/2003 3 ANADIGICS, Inc. 141 Mount Bethel Road Warren, ...
Description 3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...

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    AD53508 AD53508JP

Analog Devices, Inc.
AD[Analog Devices]
Part No. AD53508 AD53508JP
OCR Text ... AD53508-SPECIFICATIONS (T = 25 C, rated power supplies unless otherwise noted) A Parameter VOLTAGE FORCE/MEASURE MODE Voltage Swing,...999 +9 +12 1.001 15 0.02 0.31 20 100 2.0 200 V V V/V mV % of Span mV/V ppm (PV or MV)/C...
Description PPMU Circuit PPMU电路

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