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  25 15-g Datasheet PDF File

For 25 15-g Found Datasheets File :: 223944    Search Time::7.921ms    
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    BUK9Y153-100E-15

NXP Semiconductors
Part No. BUK9Y153-100E-15
OCR Text ...v ds drain-source voltage t j 25 c; t j 175 c - - 100 v i d drain current v gs = 5 v; t mb = 25 c; fig. 2 - - 9.4 a p tot total power...15 15 v p tot total power dissipation t mb = 25 c; fig. 1 - 37 w t mb = 25 c; v gs = 5 v; fig. ...
Description N-channel 100 V, 153 m logic level MOSFET in LFPAK56

File Size 652.10K  /  13 Page

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    HAT1097R-15

Renesas Electronics Corporation
Part No. HAT1097R-15
OCR Text ...w 10 s 3. value at tch = 25 c, rg 50 ? hat1097r, hat1097rj rev.1.00, feb.15.2005, page 2 of 7 electrical characteristics item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss ?60...
Description Silicon P Channel Power MOS FET High Speed Power Switching

File Size 97.83K  /  10 Page

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    DMP2104V-15

Diodes Incorporated
Part No. DMP2104V-15
OCR Text ... = - 4.5v t ??? a = + 25 c t a = + 70c i d - 2.1 - 1.65 a continuous drain current (note 5 ) v gs = - 2.5v ...15 0.18 0.21 0.24 0.27 0.3 -50 -25 0 25 50 75 100 125 150 v = -1.8v i = -200ma gs d v = -2.5v i ...
Description    P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 380.43K  /  6 Page

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    NP89N04PDK-15

Renesas Electronics Corporation
Part No. NP89N04PDK-15
OCR Text ... c iss = 3900 pf typ. (v ds = 25 v) ? logic level drive type ? designed for automotive application and aec-q101 qualified orderin...15 20 v gs - gate to source voltage - v drain current vs. drain to source voltage 0 50 150 400 100 ...
Description 40 V ?90 A ?N-channel Power MOS FET Application: Automotive

File Size 109.58K  /  8 Page

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    PSMN1R5-30BLE-15

NXP Semiconductors
Part No. PSMN1R5-30BLE-15
OCR Text ...v ds drain-source voltage t j 25 c; t j 175 c - - 30 v i d drain current t mb = 25 c; v gs = 10 v; fig. 1 [1] - - 120 a p tot total p...15 v; fig. 14 ; fig. 15 - 33.2 - nc q g(tot) total gate charge v gs = 10 v; i d = 25 a; v ds = 1...
Description N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK

File Size 221.88K  /  13 Page

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    PMZ390UNE-15

NXP Semiconductors
Part No. PMZ390UNE-15
OCR Text ...v gs gate-source voltage t j = 25 c -8 - 8 v i d drain current v gs = 4.5 v; t amb = 25 c [1] - - 0.9 a static characteristics r dson dra...15 v; i d = 0.8 a; v gs = 4.5 v; t j = 25 c - 0.2 - nc c iss input capacitance - 41 - pf c oss ou...
Description 30 V, N-channel Trench MOSFET

File Size 213.00K  /  14 Page

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    PMZ600UNE-15

NXP Semiconductors
Part No. PMZ600UNE-15
OCR Text ...v gs gate-source voltage t j = 25 c -8 - 8 v i d drain current v gs = 4.5 v; t amb = 25 c [1] - - 0.6 a static characteristics r dson dra...15 5. pinning information table 2. pinning information pin symbol description simplified outline gra...
Description 20 V, N-channel Trench MOSFET

File Size 232.53K  /  15 Page

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    IRHYS67134CM-15

International Rectifier
Part No. IRHYS67134CM-15
OCR Text ... ? 10 v ds = 120v, v gs = 0v ??25 v ds = 120v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate...15 nc v ds = 75v q gd gate-to-drain (?miller?) charge ? ? 18 t d (on) turn-on delay time ? ? 20 v d...
Description Simple Drive Requirements

File Size 187.94K  /  9 Page

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