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				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...apacitance Min. -55 --- --- -2.0 8.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.034 --- --- --- --- --- --- --- --- --- --- 14 66 39 63 4.5 7.5 1200 520 250 Max. Units Conditions --- V VGS = 0V, ID ...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	...aded package. PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB) tab drain 123 gate source drain LIMITI...39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1 3.30 ...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7106 IRF7106TR
OCR Text	... N-Ch VDSS 20V P-Ch -20V 2 7 3 6 4 5 RDS(on) 0.125 0.20 ID 3.0A -2.5A P-CHANNEL MOSFET Top View SO-8 Ab...39 60 4.0 -- 6.0 -- 300 -- 280 -- 260 -- 250 -- 62 -- 86 -- Units V V/C V(BR)DSS/TJ Breakdown V...
Description	20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
File Size	157.44K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D1
OCR Text	...DS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.5 2.2 -55 to 150 C W A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4...39 51 48 Units Conditions V Tj = 25C, Is = 1A, VGS =0V Tj = 125C, Is = 1A, VGS =0V ns Tj = 25C...
Description	MOSFET / SCHOTTKY DIODE
File Size	162.75K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D2
OCR Text	...DS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.7 2.3 -55 to 150 C W A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4...39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Te...
Description	MOSFET / SCHOTTKY DIODE
File Size	131.40K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF7807VD1
OCR Text	...DS VGS ID Max. 30 20 8.3 6.6 66 2.5 1.6 3.5 2.2 -55 to 150 C W A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4...39 Units Conditions V Tj = 25C, Is = 1.0A, VGS =0VR Tj = 125C, Is = 1.0A, VGS =0VR ns Tj = 25C, Is =...
Description	Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管 FETKY MOSFET / SCHOTTKY DIODE FETKY⑩ MOSFET / SCHOTTKY DIODE
File Size	116.12K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text	... S S S G 1 8 7 A D D D D 2 3 6 Description These new devices employ advanced HEXFET Power MOSFET technology to achieve an un...39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81...
Description	8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET Chip-Set for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	238.61K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811A IRF7809A IRF7811ATR
OCR Text	... S S G 1 8 7 A A D D D D 2 Description These new devices employ advanced HEXFET(R) Power MOSFET technology to achieve an unprecede...39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 3-30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171-0021 J...
Description	PROVISIONAL DATASHEET Chipset for DC-DC Converters 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	124.48K / 4 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	... VGS(th) Gate Threshold Voltage 2.0 gfs Forward Transconductance 4.0 --- IDSS Drain-to-Source Leakage Current --- Gate-to-Source Forward Lea...39 ID = 8.0A 10 nC VDS = 400V 19 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 8.0A ns --- R...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

				SEMELAB LTD SEME-LAB[Seme LAB]
Part No.	IRF9140
OCR Text	... 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 2 -100V -18A 0.2 * SIMPLE DRIVE REQUIREMENTS * SCREENING OPTIONS AVAILABLE 1.09 (0.043) 0.97 (0.038) dia. 2 plcs. TO-3 Metal Package Pin 1 - Gate Pin 2 - Source Case - Drain ABSOLU...
Description	P-CHANNEL POWER MOSFET
File Size	21.26K / 2 Page	View it Online	Download Datasheet

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