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2170.0 Datasheet PDF File

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				Freescale Semiconductor, Inc
Part No.	ATC600F4R7BT250XT ATC600F390JT250XT ATC600F0R5BT250XT ATC600F0R9BT250XT ATC600F5R6BT250XT GRM55DR61H106KA88L RFP-06012A15Z50 GSC355-HYB2150 GRM31CR71H475KA12L GRM31CR71H105KA12L CRCW12064K70FKEA MD7IC2251NR1 MD7IC2251GNR1
OCR Text	...that makes it usable from 2110--2170 mhz. this multi--stage structure is rated for 26 to 32 volt operation and covers all typical cellular b...0.01% probability on ccdf. frequency g ps (db) pae (%) output par (db) acpr (dbc) 2110 mhz 28.8 38.2...
Description	RF LDMOS Wideband Integrated Power Amplifiers
File Size	716.17K / 17 Page	View it Online	Download Datasheet

				Bel Fuse, Inc. MACOM[Tyco Electronics] MA-Com
Part No.	DS52-0002 DS52-0002-TR DS52-0002-RTR
OCR Text	2170 MHz DS52-0002 Low Cost Two-Way SMT Power Divider 19202170 MHz Features * * * * * * * Small Size and Low Profile Industry Standa...0.7 dB Typical Isolation 21 dB 1 Watt Power Handling SOIC-8 Description M/A-COM's DS52-0002 i...
Description	Low Cost Two-Way SMT Power Divider 1920- 2170 MHz Low Cost Two-Way SMT Power Divider 1920- 2170 MHz 低成本双向SMT功率分频920170年兆 1920-2170 MHz, Low cost two-way SMT power divider
File Size	102.71K / 2 Page	View it Online	Download Datasheet

				Aplus Integrated Circuits APLUS[Apuls Intergrated Circuits] Aplus Intergrated Circuits
Part No.	ASM3106C-1
OCR Text	...agram 96K x 10 bit ROM Y= 2170+80(um) 1 2 3 4 5 6 7 8 ASM3106C CHIP SIZE: X= 1550+80(um) , Y= 2170+80(um) 11 10 9 X= 1550+8...0 1 1 UNIT V uA mA uA CONDITION depending on Freq. 4MHz, RM in HALT Mode 4MHz, RM IO Floating 4MHz, ...
Description	VERY LOW-COST VOICE SYNTHESIZER WITH 4-BIT MICROPROCESSOR
File Size	452.82K / 7 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF8S21200HSR6 MRF8S21200HR6 MRF8S21200HR610
OCR Text	...s with frequencies from 2110 to 2170 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? ty...0.01% probability on ccdf. frequency g ps (db) d (%) output par (db) acpr (dbc) 2110 mhz 17.8 32.6 ...
Description	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
File Size	578.44K / 14 Page	View it Online	Download Datasheet

				Tyco Electronics
Part No.	MAPLST0822-002PP
OCR Text	...(VDD = 28 Vdc, IDQ = 35 mA, f = 2170 MHz, POUT = 2 W) Drain Efficiency (VDD = 28 Vdc, IDQ = 35 mA, f = 2170 MHz, POUT = 2 W) Input Return Lo...0 Graph 1. W-CDMA: Gain and Efficiency versus Output Power Graph 2. W-CDMA: ACPR versus Output...
Description	RF Power Field Effect Transistor LDMOS, 800-2200 MHz, 2W, 28V
File Size	255.55K / 10 Page	View it Online	Download Datasheet

				Tyco Electronics
Part No.	MAPLST2122-015CF
OCR Text	2170 MHz, 15W, 28V 8/20/03 Preliminary MAPLST2122-015CF Features Designed for W-CDMA base station applications in the 2.1 to 2....0 Vdc, ID = 20 Adc) CHARACTERISTICS Zero Gate Voltage Drain Leakage Current 28 (VDS = 65 Vdc, VGS = ...
Description	RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V
File Size	234.56K / 5 Page	View it Online	Download Datasheet

				Tyco Electronics
Part No.	MAPLST2122-030CF
OCR Text	2170 MHz, 30W, 28V 4/6/2005 Preliminary MAPLST2122-030CF Features Designed for W-CDMA base station applications in the 2.1 to 2...0 Vdc, ID = 20 Adc) CHARACTERISTICS Zero Gate Voltage Drain Leakage Current 28 (VDS = 65 Vdc, VGS = ...
Description	RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 30W, 28V
File Size	158.31K / 5 Page	View it Online	Download Datasheet

				Tyco Electronics
Part No.	MAPLST2122-060CF
OCR Text	2170 MHz, 60W, 28V 4/6/2005 Preliminary MAPLST2122-060CF Features Designed for W-CDMA base station applications in the 2.1 to 2...0 Unit C/W NOTE--CAUTION--MOS devices are susceptible to damage from electrostatic charge. Precau...
Description	RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
File Size	168.31K / 5 Page	View it Online	Download Datasheet

				Tyco Electronics
Part No.	MAPLST2122-090CF
OCR Text	2170 MHz, 90W, 28V 4/6/2005 Preliminary MAPLST2122-090CF Features Designed for W-CDMA base station applications in the 2.1 to 2...0.85 Unit C/W NOTE--CAUTION--MOS devices are susceptible to damage from electrostatic charge. Pre...
Description	RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V
File Size	160.55K / 5 Page	View it Online	Download Datasheet

				MOTOROLA
Part No.	MHV5IC2215NR2
OCR Text	... dBm, Full Frequency Band (2130 2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 24 dB ACPR @ 5 MHz Offset -- - 55 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 3:1 VSWR, @ 28 Vdc, 2...
Description	2170 MHz, 23 dBm, 28 V Single N鈥揅DMA
File Size	578.93K / 16 Page	View it Online	Download Datasheet

For 2170.0 Found Datasheets File :: 1543 Search Time::1.625ms
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