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  20v us Datasheet PDF File

For 20v us Found Datasheets File :: 4709    Search Time::1.953ms    
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    IRFU014A IRFR014A

Samsung semiconductor
Fairchild Semiconductor
Part No. IRFU014A IRFR014A
OCR Text ...S=0V,ID=250A V/C ID=250A VGS=20v VGS=-20v VDS=60V See Fig 7 VDS=5V,ID=250A VDS=48V,TC=125C VGS=10V,ID=4.1A VDS=30V,ID=4.1A (4) ...us et 2 T = 2 oC .C 5 10 0 11 0 - 5 oC 5 1 -1 0 2 4 6 @N ts : oe 1 V =0 V . GS 2 V =3 V . DS 0...
Description ADVANCED POWER MOSFET

File Size 213.94K  /  7 Page

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    Fairchild Semiconductor, Corp.
Part No. FMBL1G100us60
OCR Text ... 0 30 60 90 120 150 180 210 240 20v 12v 15v v ge = 10v common emitter t c = 25 collector current, i c [a] collector - emitter voltage, v ce [v] 0.3 1 10 20 0 50 100 150 200 250 common emitter v ge = 15v t c = 25 t c = 125 ...
Description 100 A, 600 V, N-CHANNEL IGBT 7PM-AA, 7 PIN

File Size 666.47K  /  9 Page

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    IRFZ24A

Fairchild Semiconductor, Corp.
Part No. IRFZ24A
OCR Text ...S=0V,ID=250A V/C ID=250A VGS=20v VGS=-20v VDS=60V See Fig 7 VDS=5V,ID=250A VDS=48V,TC=150C VGS=10V,ID=8.5A VDS=30V,ID=8.5A (4) ...us et 2 T = 2 oC .C 5 10 0 11 0 - 5 oC 5 1 0 -1 @N ts : oe 1 V =0 V . GS 2 V =3 V . DS 0 3 2 ...
Description    ADVANCED POWER MOSFET
60V N-Channel Power MOSFET(漏源电压0V的N沟道增强型功率MOS场效应管) 17 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 217.34K  /  7 Page

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    DCR750F75 DCR750F70

Dynex Semiconductor
Part No. DCR750F75 DCR750F70
OCR Text ...dt = 5a/s, - 1200 s dv dr /dt = 20v/s linear to 2500v i rr reverse recovery current 95 118 a q s stored charge i t = 1000a, tp = 1000us,t j...us) stored charge, q s - (uc) q smin = 1513*(di/dt) 0.4251 q smax = 2433*(di/dt) 0.3809 conditi...
Description Phase Control Thyristor

File Size 212.79K  /  11 Page

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    SGW10N60RUFD SGW10N60RUFDTM

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. SGW10N60RUFD SGW10N60RUFDTM
OCR Text ...5 Common Emitter TC = 25 30 20v 15V 25 12V Collector Current, I C [A] 30 25 20 15 10 V GE = 10V Collector Current, IC [A] ...us] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 600 100 V R = 200V ...
Description Discrete, Short Circuit Rated IGBT with Diode

File Size 594.14K  /  8 Page

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    AO8820 AO882012

Alpha & Omega Semiconductors
Part No. AO8820 AO882012
OCR Text 20v common-drain dual n-channel mosfet general description product summary v ds i d (at v gs =10v) 7a r ds(on) (at v gs =10v) < 21m...us electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditio...
Description 20v Common-Drain Dual N-Channel MOSFET

File Size 197.04K  /  5 Page

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    SGH30N60RUFD SGH30N60RUFDTU

FAIRCHILD[Fairchild Semiconductor]
Part No. SGH30N60RUFD SGH30N60RUFDTU
OCR Text ...90 80 70 Common Emitter TC = 25 20v 15V 90 80 Common Emitter VGE = 15V T C = 25 T C = 125 ------ Collector Current, IC [A] 70 60 5...us] Fig 18. Forward Characteristics Fig 19. Reverse Recovery Current 1000 120 V R = 200V...
Description    Short Circuit Rated IGBT
Discrete, Short Circuit Rated IGBT with Diode

File Size 650.47K  /  8 Page

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    DCR680N70 DCR680N75 DCR680N80 DCR680N85

Dynex Semiconductor
Part No. DCR680N70 DCR680N75 DCR680N80 DCR680N85
OCR Text ...t = -5a/s, - 1200 s dv dr /dt = 20v/s linear to 2500v i rr reverse recovery current 95 118 a q s stored charge i t = 1000a, t p = 1000us,t...us) stored charge, q s - (uc) q smin = 1513*(di/dt) 0.4251 q smax = 2433*(di/dt) 0.3809 conditi...
Description Phase Control Thyristor

File Size 212.34K  /  11 Page

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    FDC6330L FDC6330

http://
FAIRCHILD[Fairchild Semiconductor]
Part No. FDC6330L FDC6330
OCR Text ...lectronic equipment where 3V to 20v input and 2.3A output current capability are needed. This load switch integrates a small N-Channel power...us, D 2% 0.1 V IN = 5V VON/OF F = 1. 5 - 8 V PW =300 us, D 2% 0 0 1 2 IL , (A) 3 4 5 0 0...
Description Integrated Load Switch

File Size 184.22K  /  7 Page

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